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Infineon Technologies 
IPP80P03P4L-07的详细信息
| Manufacturer： | Infineon |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Transistor Polarity： | P-Channel |
| Vds - Drain-Source Breakdown Voltage： | - 30 V |
| Vgs - Gate-Source Breakdown Voltage： | + 5 / - 16 V |
| Id - Continuous Drain Current： | - 80 A |
| Rds On - Drain-Source Resistance： | 6.9 mOhms |
| Vgs th - Gate-Source Threshold Voltage： | - 2 V |
| Qg - Gate Charge： | 63 nC |
| Maximum Operating Temperature： | + 175 C |
| Pd - Power Dissipation： | 88 W |
| Mounting Style： | Through Hole |
| Package / Case： | TO-220-3 |
| Packaging： | Tube |
| Brand： | Infineon Technologies |
| Channel Mode： | Enhancement |
| Fall Time： | 60 ns |
| Minimum Operating Temperature： | - 55 C |
| Rise Time： | 4 ns |
| Series： | IPP80P03 |
| Factory Pack Quantity： | 500 |
| Typical Turn-Off Delay Time： | 15 ns |
| Part # Aliases： | IPP80P03P4L07AKSA1 SP000396392 |
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