IPP50CN10NGXKSA1的详细信息
Manufacturer: | Infineon |
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Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 20 A |
Rds On - Drain-Source Resistance: | 38 mOhms |
Configuration: | Single |
Qg - Gate Charge: | 12 nC |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 44 W |
Mounting Style: | Through Hole |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Brand: | Infineon Technologies |
Fall Time: | 3 ns |
Forward Transconductance - Min: | 21 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 4 ns |
Series: | IPP50CN10 |
Factory Pack Quantity: | 500 |
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