首页 > Toshiba > 半导体 > 分离式半导体 > HN7G01FE-A(TE85L,F
型号:

HN7G01FE-A(TE85L,F

厂商: Toshiba
标准:
分类: 半导体分离式半导体
描述: transistors bipolar - bjt vceo=-12v vds=20v Ic=-400ma Id=50ma
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HN7G01FE-A(TE85L,F的详细信息

Manufacturer: Toshiba
Product Category: Transistors Bipolar - BJT
RoHS: Yes
Brand: Toshiba
Configuration: Dual
Transistor Polarity: PNP
Collector- Base Voltage VCBO: - 15 V
Collector- Emitter Voltage VCEO Max: - 12 V
Emitter- Base Voltage VEBO: - 5 V
Mounting Style: Through Hole
Package / Case: ES-6
Continuous Collector Current: - 400 mA
DC Collector/Base Gain hfe Min: 300
DC Current Gain hFE Max: 1000
Maximum Power Dissipation: 100 mW
Packaging: Reel
Factory Pack Quantity: 4000

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