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| 型号： | FGAF20N60SMD |
| 厂商： |
 Fairchild Semiconductor |
| 标准： |   |
| 分类： | 半导体 ， 分离式半导体 |
| 描述： | igbt transistors 600 V 40 A 62.5 W |
| 报错 收藏 赞 | |
FGAF20N60SMD的详细信息
| Manufacturer： | Fairchild Semiconductor |
|---|---|
| Product Category： | IGBT Transistors |
| RoHS： | Yes |
| Collector- Emitter Voltage VCEO Max： | 600 V |
| Collector-Emitter Saturation Voltage： | 1.9 V |
| Maximum Gate Emitter Voltage： | 20 V |
| Continuous Collector Current at 25 C： | 40 A |
| Gate-Emitter Leakage Current： | 400 nA |
| Power Dissipation： | 62.5 W |
| Maximum Operating Temperature： | + 175 C |
| Package / Case： | TO-3PF |
| Packaging： | Tube |
| Brand： | Fairchild Semiconductor |
| Minimum Operating Temperature： | - 55 C |
| Mounting Style： | Through Hole |
| Series： | FGAF20N60 |
| Factory Pack Quantity： | 30 |
| Unit Weight： | 7 g |
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