Image FDU6N25
型号:

FDU6N25

厂商: Fairchild Semiconductor Fairchild Semiconductor
标准:
分类: 半导体分离式半导体
描述: mosfet N-channel unifet
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FDU6N25的详细信息

Manufacturer: Fairchild Semiconductor
Product Category: MOSFET
RoHS: Yes
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 250 V
Vgs - Gate-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 4.4 A
Rds On - Drain-Source Resistance: 1.1 Ohms
Configuration: Single
Vgs th - Gate-Source Threshold Voltage: 5 V
Qg - Gate Charge: 6 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 50 W
Mounting Style: Through Hole
Package / Case: IPAK-3
Packaging: Tube
Brand: Fairchild Semiconductor
Fall Time: 34 ns
Forward Transconductance - Min: 5.5 S
Minimum Operating Temperature: - 55 C
Rise Time: 60 ns
Series: FDU6N25
Factory Pack Quantity: 70
Typical Turn-Off Delay Time: 24 ns
Unit Weight: 539 mg