Texas Instruments 
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CSD16323Q3的详细信息
| Manufacturer： | Texas Instruments |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Brand： | Texas Instruments |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 25 V |
| Vgs - Gate-Source Breakdown Voltage： | - 8 V, + 10 V |
| Id - Continuous Drain Current： | 21 A |
| Rds On - Drain-Source Resistance： | 4.5 mOhms |
| Configuration： | Single Quad Drain Triple Source |
| Maximum Operating Temperature： | + 150 C |
| Pd - Power Dissipation： | 3 W |
| Mounting Style： | SMD/SMT |
| Package / Case： | VSON-8 Clip |
| Packaging： | Reel |
| Channel Mode： | Enhancement |
| Fall Time： | 6.3 ns |
| Minimum Operating Temperature： | - 55 C |
| Rise Time： | 15 ns |
| Series： | CSD16323Q3 |
| Factory Pack Quantity： | 2500 |
| Tradename： | NexFET |
| Typical Turn-Off Delay Time： | 13 ns |
CSD16323Q3相关文档
- PCN: TI - PCN - 7-30-10
- PCN: Qualification of Amkor Philippines as Alternate Assembly/Test site for select PQFN Devices
- Evaluation Kits: Generates 4V@ 800mA avg/2.5Apeak using SEPIC configuration
- Evaluation Kits: Class 3- 36V-72V Input 2.5V/5A Active Clamp Forward; 1/16 Brick
- Evaluation Kits: Sync Buck (1.2V@10A off 12V or 3.3V) for Power MUX
- Function Diagram: alt_slps224b
- PCN: Qualification of Reduced Wire Bond diameter for the Family of Discrete Clip & Power Block Devices
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