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NXP Semiconductors 
Datasheet下载地址
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BUK9Y104-100B,115的详细信息
| Manufacturer： | NXP |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 100 V |
| Vgs - Gate-Source Breakdown Voltage： | 15 V |
| Id - Continuous Drain Current： | 14.8 A |
| Rds On - Drain-Source Resistance： | 99 mOhms |
| Configuration： | Single |
| Vgs th - Gate-Source Threshold Voltage： | 1.65 V |
| Qg - Gate Charge： | 11 nC |
| Maximum Operating Temperature： | + 175 C |
| Pd - Power Dissipation： | 59 W |
| Mounting Style： | SMD/SMT |
| Package / Case： | LFPAK-4 |
| Packaging： | Reel |
| Brand： | NXP Semiconductors |
| Channel Mode： | Enhancement |
| Fall Time： | 6 ns |
| Minimum Operating Temperature： | - 55 C |
| Rise Time： | 8 ns |
| Factory Pack Quantity： | 1500 |
| Typical Turn-Off Delay Time： | 36 ns |
BUK9Y104-100B,115相关文档
- Selection guide: NXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)
- Leaflet: LFPAK - The Toughest Power SO8 (v.1.2)
- Brochure: Power MOSFETs for Automotive Applications; Performance, Quality, Reliability (v.1.0)
- SPICE model: BUK9Y104-100B SPICE model (v.2.0)
- Thermal design: BUK9Y104-100B_RC_Thermal_Model (v.1.0)
- Application note: Power MOSFET single-shot and repetitive avalanche ruggedness rating (v.2.1)
- Application note: LFPAK MOSFET thermal design guide - Part 2 (v.2.0)
- Application note: LFPAK MOSFET thermal design guide (v.2.0)
- Application note: Understanding Power MOSFET Datasheet Parameters (v.1.0)
- Leaflet: High reliability LFPAK MOSFETs for Automotive Power Applications (v.1.1)
- Thermal model: BUK9Y104-100B Thermal model (v.1.0)
- PCN: Advance Product Change Notification
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