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BSP110,115的详细信息
Manufacturer: | NXP |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | NXP Semiconductors |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 520 mA |
Rds On - Drain-Source Resistance: | 10 Ohms |
Configuration: | Single Dual Drain |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 6.25 W |
Mounting Style: | SMD/SMT |
Package / Case: | SC-73-4 |
Packaging: | Reel |
Channel Mode: | Enhancement |
Minimum Operating Temperature: | - 65 C |
Factory Pack Quantity: | 1000 |
Part # Aliases: | BSP110 T/R |
BSP110,115相关文档
- Selection guide: NXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)
- SPICE model: BSP110 SPICE model (v.1.3)
- Application note: Understanding Power MOSFET Datasheet Parameters (v.1.0)
- S-parameter: BSP110_8_20_2010 Spice parameter (v.1.0)
- Line card: Broad small-signal MOSFET portfolio to suit a wide range of applications (v.2.0)
- PCN: Customer Information Notification
- PCN: Customer Information Notification
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