Datasheet下载地址
本地下载 >> 厂商下载2 >> 第三方平台下载 >> |
BSP030,115的详细信息
Manufacturer: | NXP |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | NXP Semiconductors |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 10 A |
Rds On - Drain-Source Resistance: | 30 mOhms |
Configuration: | Single Dual Drain |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 8.3 W |
Mounting Style: | SMD/SMT |
Package / Case: | SC-73-4 |
Packaging: | Reel |
Channel Mode: | Enhancement |
Fall Time: | 20 ns |
Forward Transconductance - Min: | 12 S |
Minimum Operating Temperature: | - 65 C |
Rise Time: | 10 ns |
Factory Pack Quantity: | 1000 |
Typical Turn-Off Delay Time: | 24 ns |
Part # Aliases: | BSP030 T/R |
BSP030,115相关文档
- Line card: Broad small-signal MOSFET portfolio to suit a wide range of applications (v.2.0)
- Application note: Understanding Power MOSFET Datasheet Parameters (v.1.0)
- Selection guide: NXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)
- S-parameter: BSP030.12_03_2012 Spice parameter (v.1.0)
- PCN: Customer Information Notification
- PCN: Customer Information Notification
扫码手机查看更方便
同类器件