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BSM35GP120的详细信息
Manufacturer: | Infineon |
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Product Category: | IGBT Modules |
RoHS: | No |
Brand: | Infineon Technologies |
Product: | IGBT Silicon Modules |
Configuration: | Hex |
Collector- Emitter Voltage VCEO Max: | 1200 V |
Collector-Emitter Saturation Voltage: | 2.4 V |
Continuous Collector Current at 25 C: | 45 A |
Gate-Emitter Leakage Current: | 300 nA |
Power Dissipation: | 230 W |
Maximum Operating Temperature: | + 125 C |
Package / Case: | EconoPIM2 |
Maximum Gate Emitter Voltage: | +/- 20 V |
Minimum Operating Temperature: | - 40 C |
Mounting Style: | Screw |
Factory Pack Quantity: | 500 |
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