型号:

BSM35GP120

厂商: Infineon Technologies Infineon Technologies
分类: 半导体分离式半导体
描述: igbt modules 1200v 35a pim
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BSM35GP120的详细信息

Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: No
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.4 V
Continuous Collector Current at 25 C: 45 A
Gate-Emitter Leakage Current: 300 nA
Power Dissipation: 230 W
Maximum Operating Temperature: + 125 C
Package / Case: EconoPIM2
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 500