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BLT81,115的详细信息
Manufacturer: | NXP |
---|---|
Product Category: | Transistors RF Bipolar |
RoHS: | Yes |
Brand: | NXP Semiconductors |
Type: | RF Bipolar Power |
Transistor Polarity: | NPN |
Collector- Emitter Voltage VCEO Max: | 9.5 V |
Emitter- Base Voltage VEBO: | 2.5 V |
Maximum Operating Temperature: | + 150 C |
Power Dissipation: | 2000 mW |
Configuration: | Single Dual Emitter |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-223 |
Packaging: | Reel |
Maximum DC Collector Current: | 0.5 A |
Minimum Operating Temperature: | - 65 C |
Factory Pack Quantity: | 1000 |
Part # Aliases: | BLT81 T/R |
BLT81,115相关文档
- Brochure: Your partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)
- Application note: GSM power amplifier for 900MHz at 6V (v.1.0)
- PCN: Customer Information Notification
- PCN: Customer Information Notification
- PCN: Customer Information Notification
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