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NXP Semiconductors 
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BLF8G24LS-200P,112的详细信息
| Manufacturer： | NXP |
|---|---|
| Product Category： | Transistors RF MOSFET |
| RoHS： | Yes |
| Frequency： | 2.3 GHz to 2.4 GHz |
| Gain： | 16.5 dB |
| Output Power： | 200 W |
| Vds - Drain-Source Breakdown Voltage： | 68 V |
| Vgs - Gate-Source Breakdown Voltage： | 13 V |
| Mounting Style： | SMD/SMT |
| Package / Case： | SOT-539B |
| Packaging： | Tube |
| Brand： | NXP Semiconductors |
| Factory Pack Quantity： | 20 |
BLF8G24LS-200P,112相关文档
- Brochure: Your partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)
- Mounting and soldering: Fatigue in aluminum bond wires (v.1.0)
- Selection guide: NXP's RF Manual 16th edition (v.1.0)
- Application note: Mounting and Soldering of RF transistors (v.1.0)
- Leaflet: Gen8: the next generation of LDMOS RF power for wireless infrastructures (v.1.0)
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