型号: | BFR 182 E6327 |
厂商: |
Infineon Technologies |
标准: | |
分类: | 半导体 , 分离式半导体 |
描述: | transistors RF bipolar npn silicon RF transistor |
报错 收藏 赞 |
Datasheet下载地址
本地下载 >> 厂商下载2 >> 第三方平台下载 >> |
BFR 182 E6327的详细信息
Manufacturer: | Infineon |
---|---|
Product Category: | Transistors RF Bipolar |
RoHS: | Yes |
Brand: | Infineon Technologies |
Type: | RF Bipolar Small Signal |
Transistor Polarity: | NPN |
DC Collector/Base Gain hfe Min: | 70 |
Maximum Operating Frequency: | 8000 MHz |
Collector- Emitter Voltage VCEO Max: | 12 V |
Emitter- Base Voltage VEBO: | 2 V |
Continuous Collector Current: | 0.035 A |
Maximum Operating Temperature: | + 150 C |
Power Dissipation: | 250 mW |
Configuration: | Single |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-23 |
Packaging: | Reel |
Maximum DC Collector Current: | 0.035 A |
Minimum Operating Temperature: | - 65 C |
Series: | BFR182 |
Factory Pack Quantity: | 3000 |
Part # Aliases: | BFR182E6327HTSA1 SP000011051 |
扫码手机查看更方便
同类器件