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ON Semiconductor 
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2N6341G的详细信息
| Manufacturer： | ON Semiconductor |
|---|---|
| Product Category： | Transistors Bipolar - BJT |
| RoHS： | Yes |
| Brand： | ON Semiconductor |
| Configuration： | Single |
| Transistor Polarity： | NPN |
| Collector- Base Voltage VCBO： | 180 V |
| Collector- Emitter Voltage VCEO Max： | 150 V |
| Emitter- Base Voltage VEBO： | 6 V |
| Collector-Emitter Saturation Voltage： | 1.8 V |
| Maximum DC Collector Current： | 25 A |
| Gain Bandwidth Product fT： | 40 MHz |
| Maximum Operating Temperature： | + 150 C |
| Mounting Style： | Through Hole |
| Package / Case： | TO-204-2 (TO-3) |
| Continuous Collector Current： | 25 A |
| DC Collector/Base Gain hfe Min： | 50 |
| Maximum Power Dissipation： | 200 W |
| Minimum Operating Temperature： | - 65 C |
| Packaging： | Tray |
| Series： | 2N6341 |
| Factory Pack Quantity： | 100 |
2N6341G相关文档
- PCN: ON Semiconductor - PCN 6-4-10
- Simulation Model: Spice3 Model
- Simulation Model: Saber Model
- Package Drawing: TO-204 (TO-3)
- Simulation Model: PSpice Model
- Simulation Model: Spice2 Model
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