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GT40M301 |
Toshiba Semiconductor and Storage |
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N channel tmos type(high power swithcing applications) |
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MRF158 |
Motorola, Inc |
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tmos broadband RF power fet |
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MRF158 |
Tyco Electronics |
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tmos broadband RF power fet |
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MRF166W |
Motorola, Inc |
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tmos broadband RF power fet |
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MRF171 |
Advanced Semiconductor |
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N-channel enhancement mode tmos RF fet |
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BSS123LT1 |
Motorola, Inc |
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tmos fet transistor(N-channel) |
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AN1042D |
ON Semiconductor |
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high fidelity switching audio amplifiers using tmos power mosfets |
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MTD10N10EL |
ON Semiconductor |
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半导体
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tmos E-fet power field effect transistor dpak for surface mount |
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MTD10N10ELT4G |
ON Semiconductor |
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tmos E8722;fet power field effect transistor dpak for surface mount |
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MTD10N10EL_06 |
ON Semiconductor |
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tmos E8722;fet power field effect transistor dpak for surface mount |
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AN1042 |
ON Semiconductor |
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high fidelity switching audio amplifiers using tmos power mosfets |
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MTP3055 |
Motorola, Inc |
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tmos power fet 12 amperes 60 volts rds(on) = 0.15 ohm |
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MTP3055V |
Motorola, Inc |
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tmos power fet 12 amperes 60 volts rds(on) = 0.15 ohm |
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MTP30N06VL |
Motorola, Inc |
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tmos power fet 30 amperes 60 volts rds(on) = 0.050 ohm |
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MTP33N10 |
Motorola, Inc |
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tmos power fet 33 amperes 100 volts rds(on) = 0.06 ohm |
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MTP33N10E |
Motorola, Inc |
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tmos power fet 33 amperes 100 volts rds(on) = 0.06 ohm |
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MTP3N120E |
Motorola, Inc |
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tmos power fet 3.0 amperes 1200 volts rds(on) = 5.0 ohm |
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MTP36N06 |
Motorola, Inc |
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tmos power fet 32 amperes 60 volts rds(on) = 0.04 ohm |
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MTP3N100E |
Motorola, Inc |
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tmos power fet 3.0 amperes 1000 volts rds(on) = 4.0 ohm |
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MTP3N25E |
Motorola, Inc |
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tmos power fet 3.0 amperes 250 volts rds(on) = 1.4 ohm |