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KM6161002B-8 |
Samsung semiconductor |
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64kx16 bit high speed static ram(5.0V operating), revolutionary pin out. |
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KM6161002B |
Samsung semiconductor |
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64kx16 bit high speed static ram(5.0V operating), revolutionary pin out. |
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SPP02N80C3_08 |
Infineon Technologies |
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coolmostm power transistor features new revolutionary high voltage technology |
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SPD02N80C3_08 |
Infineon Technologies |
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coolmostm power transistor features new revolutionary high voltage technology |
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KM6161002A-15 |
Samsung semiconductor |
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64k x 16 bit speed static ram (5V operating), revolutionary pin out |
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KM6161002BI-8 |
Samsung semiconductor |
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64kx16 bit high speed static ram(5.0V operating), revolutionary pin out. |
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KM6161002B-10 |
Samsung semiconductor |
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64kx16 bit high speed static ram(5.0V operating), revolutionary pin out. |
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KM6161002A |
Samsung semiconductor |
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64k x 16 bit speed static ram (5V operating), revolutionary pin out |
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KM6161002AI-20 |
Samsung semiconductor |
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64k x 16 bit speed static ram (5V operating), revolutionary pin out |
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KM6161002BI |
Samsung semiconductor |
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64kx16 bit high speed static ram(5.0V operating), revolutionary pin out. |
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KM6161002BI-12 |
Samsung semiconductor |
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64kx16 bit high speed static ram(5.0V operating), revolutionary pin out. |
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KM6161002BI-10 |
Samsung semiconductor |
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64kx16 bit high speed static ram(5.0V operating), revolutionary pin out. |
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SPN01N60C3_05 |
Infineon Technologies |
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new revolutionary high voltage technology ultra low gate charge extreme dv/dt rated |
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SPD04N80C3_08 |
Infineon Technologies |
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coolmostm power transistor features new revolutionary high voltage technology |
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SPP04N80C3_08 |
Infineon Technologies |
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coolmostm power transistor features new revolutionary high voltage technology |
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SPB11N60S5_05 |
Infineon Technologies |
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new revolutionary high voltage technology ultra low gate charge |
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SPB12N50C3_05 |
Infineon Technologies |
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new revolutionary high voltage technology worldwide best rds(on) in TO 220 ultra low gate charge |
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SPP16N50C3_07 |
Infineon Technologies |
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new revolutionary high voltage technology ultra low gate charge periodic avalanche rated |
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SPP16N50C3_09 |
Infineon Technologies |
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new revolutionary high voltage technology ultra low gate charge periodic avalanche rated |
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SPP24N60C3_09 |
Infineon Technologies |
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cool mos? power transistor feature new revolutionary high voltage technology |