图片 |
型号 |
厂商 |
标准 |
分类 |
描述 |
|
TK31E60W,S1VX |
Toshiba |
 |
半导体
分离式半导体
|
MOSfet N-Ch 30.8A 290w fet 600v 3000pf 86nc |
|
RJH1CV6DPK-00#T0 |
Renesas Electronics America |
  |
半导体
IGBT - 单路
|
igbt 1200v 60a 290w TO-3P |
|
APT36GA60B |
Microsemi Power Products Group |
  |
半导体
IGBT - 单路
|
igbt 600v 65a 290w TO-247 |
|
APT35GA90BD15 |
Microsemi Power Products Group |
  |
半导体
IGBT - 单路
|
igbt 900v 63a 290w to247 |
|
APT36GA60BD15 |
Microsemi Power Products Group |
  |
半导体
IGBT - 单路
|
igbt 600v 65a 290w TO-247 |
|
APT35GA90B |
Microsemi Power Products Group |
  |
半导体
IGBT - 单路
|
igbt 900v 63a 290w TO-247 |
|
IXYR50N120C3D1 |
IXYS |
  |
半导体
IGBT - 单路
|
igbt 1200v 56a 290w isoplus247 |
|
FGH40N6S2D |
Fairchild Semiconductor |
  |
半导体
IGBT - 单路
|
igbt 600v 75a 290w to247 |
|
FGH40N6S2 |
Fairchild Semiconductor |
  |
半导体
IGBT - 单路
|
igbt 600v 75a 290w to247 |
|
FGP40N6S2 |
Fairchild Semiconductor |
  |
半导体
IGBT - 单路
|
igbt 600v 75a 290w to220ab |
|
HGTP20N60A4 |
Fairchild Semiconductor |
  |
半导体
IGBT - 单路
|
igbt 600v 70a 290w to220ab |
|
FGB40N6S2T |
Fairchild Semiconductor |
  |
半导体
IGBT - 单路
|
igbt 600v 75a 290w to263ab |
|
FGB40N6S2 |
Fairchild Semiconductor |
  |
半导体
IGBT - 单路
|
igbt 600v 75a 290w to263ab |
|
HGT1S20N60A4S9A |
Fairchild Semiconductor |
  |
半导体
IGBT - 单路
|
igbt 600v 70a 290w to263ab |
|
FGA120N30DTU |
Fairchild Semiconductor |
  |
半导体
IGBT - 单路
|
igbt 300v 120a 290w to3p |
|
FGI40N60SFTU |
Fairchild Semiconductor |
  |
半导体
IGBT - 单路
|
igbt 600v 80a 290w i2pak |
|
MS1051 |
Microsemi Power Products Group |
  |
半导体
RF 晶体管 (BJT)
|
trans RF bipo 290w 20a m174 |
|
TPR175 |
Microsemi Power Products Group |
  |
半导体
RF 晶体管 (BJT)
|
trans RF bipo 290w 9A 55cx1 |
|
TAN75A |
Microsemi Power Products Group |
  |
半导体
RF 晶体管 (BJT)
|
trans RF bipo 290w 9A 55az1 |
|
UTV8100B |
Microsemi Power Products Group |
  |
半导体
RF 晶体管 (BJT)
|
trans RF bipo 290w 15a 55rt2 |