关键词2110
标准
为您共找出"55"个相关器件
图片 型号 厂商 标准 分类 描述
Image: PTF210901E PTF210901E Infineon Technologies ldmos RF power field effect transistor 90 W, 2110-2170 mhz
Image: PTF211301 PTF211301 Infineon Technologies ldmos RF power field effect transistor 130 W, 2110-2170 mhz
Image: PTF211301A PTF211301A Infineon Technologies ldmos RF power field effect transistor 130 W, 2110-2170 mhz
Image: PTF211802 PTF211802 Infineon Technologies ldmos RF power field effect transistor 180 W, 2110-2170 mhz
Image: PTF211802A PTF211802A Infineon Technologies ldmos RF power field effect transistor 180 W, 2110-2170 mhz
Image: PTF211802E PTF211802E Infineon Technologies ldmos RF power field effect transistor 180 W, 2110-2170 mhz
Image: PTF102003 PTF102003 PEAK electronics GmbH 120 watts, 2110-2170 mhz push/pull lateral mosfet
Image: EFM-2100 EFM-2100 Tyco Electronics E-series surface mount mixer 2110-2170mhz
Image: EFM-2100TR EFM-2100TR Tyco Electronics E-series surface mount mixer 2110-2170mhz
Image: AFT21H350W03S AFT21H350W03S NXP Semiconductors 半导体 RF 晶体管 (BJT) these 63 watt asymmetrical doherty RF power ldmos transistors are designed for cellular base station applications requiring very wideinstantaneous bandwidth capability covering the frequency range of 2110 to2170 mhz
Image: CVCO55CC-1930-2110 CVCO55CC-1930-2110 Crystek Corporation 无源元器件 频率控制器和定时装置 resonators 1930-2110mhz -30c to 70c
Image: A14162-32 A14162-32 Laird Technologies / Thermal Solutions 热量管理 导热接口产品 thermal interface products tflex 2110v0 9" x 9" 1.1W/mK
Image: 2111012 2111012 3M 工具 防静电控制产品 anti-static control products 2110r reclsbl static bag 10"x12" 100ea
Image: A14162-32 A14162-32 Laird Technologies - Thermal Materials 热量管理 热 - 垫，片 tflex 2110v0 9" X 9"
Image: 82375-0022 82375-0022 Omron Automation and Safety 测试和测量 工业设备 scs foam 200 X 400 X 2110mm long

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