|
M6MGT331S8BKT |
Renata |
|
|
33,554,432-bit (2,097,152 - word BY 16-bit /4,194,304-word BY 8-bit) cmos flash memory & 8,388,608-bit (524,288-word BY 16-bit /1,048,576-word BY 8-BI |
|
M6MGT331S8AKT |
Renata |
|
|
33,554,432-bit (2,097,152 - word BY 16-bit /4,194,304-word BY 8-bit) cmos flash memory & 8,388,608-bit (524,288-word BY 16-bit /1,048,576-word BY 8-BI |
|
THM72V2010AG |
Toshiba Semiconductor and Storage |
|
|
2,097,152 words X 72 bit dynamic ram module |
|
THM72V2010AG-60 |
Toshiba Semiconductor and Storage |
|
|
2,097,152 words X 72 bit dynamic ram module |
|
THM72V2010AG-70 |
Toshiba Semiconductor and Storage |
|
|
2,097,152 words X 72 bit dynamic ram module |
|
THM72V2010ATG-60 |
Toshiba Semiconductor and Storage |
|
|
2,097,152 words X 72 bit dynamic ram module |
|
THM72V2010ATG-70 |
Toshiba Semiconductor and Storage |
|
|
2,097,152 words X 72 bit dynamic ram module |
|
M6MGD13TW34DWG |
Renata |
|
|
134,217,728-bit (8,388,608-word BY 16-bit) cmos flash memory & 33,554,432-bit (2,097,152-word BY 16-bit) cmos mobile ram |
|
M6MGD137W34DWG |
Renata |
|
|
134,217,728-bit (8,388,608-word BY 16-bit) cmos flash memory & 33,554,432-bit (2,097,152-word BY 16-bit) cmos mobile ram |
|
K4C89323AF-GCF5 |
Samsung semiconductor |
|
|
2,097,152-words x 4 banks x 36-bits double data rate network-dram |
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K4C89323AF-GCF6 |
Samsung semiconductor |
|
|
2,097,152-words x 4 banks x 36-bits double data rate network-dram |
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K4C89323AF-GCFB |
Samsung semiconductor |
|
|
2,097,152-words x 4 banks x 36-bits double data rate network-dram |
|
K4C89323AF-TCF5 |
Samsung semiconductor |
|
|
2,097,152-words x 4 banks x 36-bits double data rate network-dram |
|
K4C89323AF-TCF6 |
Samsung semiconductor |
|
|
2,097,152-words x 4 banks x 36-bits double data rate network-dram |
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K4C89323AF-TCFB |
Samsung semiconductor |
|
|
2,097,152-words x 4 banks x 36-bits double data rate network-dram |
|
K4C89363AF |
Samsung semiconductor |
|
|
2,097,152-words x 4 banks x 36-bits double data rate network-dram |
|
K4C89363AF-GCF5 |
Samsung semiconductor |
|
|
2,097,152-words x 4 banks x 36-bits double data rate network-dram |
|
K4C89363AF-GCF6 |
Samsung semiconductor |
|
|
2,097,152-words x 4 banks x 36-bits double data rate network-dram |
|
K4C89363AF-GCFB |
Samsung semiconductor |
|
|
2,097,152-words x 4 banks x 36-bits double data rate network-dram |
|
K4C89363AF-TCF5 |
Samsung semiconductor |
|
|
2,097,152-words x 4 banks x 36-bits double data rate network-dram |