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HN1D01F(TE85L,F) |
Toshiba Semiconductor and Storage |
  |
半导体
二极管,整流器 - 阵列
|
switching diode 80v CA 6 sm6 |
|
HN1D01F |
Toshiba Semiconductor and Storage |
  |
半导体
|
diode (ultral high speed switching applications) |
|
HN1D01FE(TE85L,F) |
Toshiba |
 |
半导体
分离式半导体
|
diodes - general purpose, power, switching switching diode, 80v es6 0.1A high speed |
|
HN1D01FU(T5L,F,T) |
Toshiba |
 |
半导体
分离式半导体
|
diodes - general purpose, power, switching 85v vrm 80vr 300ma 2A ifsm 0.92v VF |
|
HN1D01FU(T5L,F,T) |
Toshiba Semiconductor and Storage |
  |
半导体
二极管,整流器 - 阵列
|
diode SW 80v 100ma us6 |
|
HN1D01FE(TE85L,F) |
Toshiba Semiconductor and Storage |
  |
半导体
二极管,整流器 - 阵列
|
switching diode 80v CA 6 es6 |
|
HN1D01FU |
Toshiba Semiconductor and Storage |
  |
半导体
|
diode (ultra high speed switching applications) |
|
HN1D01FE |
Toshiba Semiconductor and Storage |
  |
半导体
|
silicon epitaxial planar type ultra high speed switching application |
|
HN1D01FU_07 |
Toshiba Semiconductor and Storage |
|
|
silicon epitaxial planar type ultra high speed switching application |
|
HN1D01F_07 |
Toshiba Semiconductor and Storage |
|
|
silicon epitaxial planar type ultra-high-speed switching applications |