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关键词41RO-1000G-BSL
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    为您共找出"75"个相关器件
    图片 型号 厂商 标准 分类 描述
    Image: 2211-1000G 2211-1000G ETC data delay devices
    Image: 1519-1000G 1519-1000G ETC 10-tap dip delay line TD/TR = 5
    Image: 2214-1000G 2214-1000G ETC 20-tap dip delay line TD/TR = 10 (series 2214)
    Image: TN2540-1000G TN2540-1000G STMicroelectronics 25a scrs
    Image: 1519-1000G 1519-1000G Data Delay Devices, Inc. 10-tap dip delay line TD/TR = 5
    Image: 2214-1000G 2214-1000G Data Delay Devices, Inc. 20-tap dip delay line TD/TR = 10
    Image: 1504-1000G 1504-1000G Data Delay Devices, Inc. fixed dip delay line TD/TR = 5
    Image: 2211-1000G 2211-1000G Data Delay Devices, Inc. fixed dip delay line TD/TR = 10
    Image: BSL302SN L6327 BSL302SN L6327 Infineon Technologies 半导体 分离式半导体 mosfet optimos 2 SM-signal transistr 30v 7.1A
    Image: BSL316C L6327 BSL316C L6327 Infineon Technologies 半导体 分离式半导体 mosfet optimos 2/optimos-P2 Sm signal transistr
    Image: BSL806N L6327 BSL806N L6327 Infineon Technologies 半导体 分离式半导体 mosfet N-channel 20v mosfet
    Image: BSL211SP L6327 BSL211SP L6327 Infineon Technologies 半导体 分离式半导体 mosfet P-CH -20 V -4.7 A
    Image: BSL308C L6327 BSL308C L6327 Infineon Technologies 半导体 分离式半导体 mosfet P/N-channel -/+30v mosfet
    Image: BSL606SN H6327 BSL606SN H6327 Infineon Technologies 半导体 分离式半导体 mosfet optimos small signal 60v 60mohm 1.5A
    Image: BSL802SN L6327 BSL802SN L6327 Infineon Technologies 半导体 分离式半导体 mosfet optimos 2 Sm-signal transistor N-CH
    Image: BSL308PE L6327 BSL308PE L6327 Infineon Technologies 半导体 FET - 阵列 mosfet 2P-CH 30v 2A 6tsop
    Image: BSL214N L6327 BSL214N L6327 Infineon Technologies 半导体 FET - 阵列 mosfet 2N-CH 20v 1.5A 6tsop
    Image: BSL314PE L6327 BSL314PE L6327 Infineon Technologies 半导体 FET - 阵列 mosfet 2P-CH 30v 1.5A 6tsop
    Image: BSL207N L6327 BSL207N L6327 Infineon Technologies 半导体 FET - 阵列 mosfet 2N-CH 20v 2.1A 6tsop
    Image: BSL205N L6327 BSL205N L6327 Infineon Technologies 半导体 FET - 阵列 mosfet 2N-CH 20v 2.5A 6tsop

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