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Toshiba Semiconductor and Storage 
RN1910FE,LF(CT的详细信息
| Datasheets： | |
|---|---|
| RN1910FE-11FE： | |
| Standard Package ： | 1 |
| Category： | Discrete Semiconductor Products |
| Family： | Transistors (BJT) - Arrays, Pre-Biased |
| Series： | - |
| Packaging ： | Cut Tape (CT) |
| Transistor Type： | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max)： | 100mA |
| Voltage - Collector Emitter Breakdown (Max)： | 50V |
| Resistor - Base (R1) (Ohms)： | 4.7k |
| Resistor - Emitter Base (R2) (Ohms)： | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce： | 120 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic： | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max)： | 100nA (ICBO) |
| Frequency - Transition： | 250MHz |
| Power - Max： | 100mW |
| Mounting Type： | Surface Mount |
| Package / Case： | SOT-563, SOT-666 |
| Supplier Device Package： | ES6 |
| Other Names： | RN1910FELF(CTCT |
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