Image RN1905(T5L,F,T)
型号:

RN1905(T5L,F,T)

厂商: Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
标准:
分类: 半导体晶体管(BJT) - 阵列﹐预偏压式
描述: tran dual npn us6 50v 100a
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RN1905(T5L,F,T)的详细信息

Datasheets:
RN1901-06:
Product Photos:
6-TSSOP, SC-88, SOT-363:
Standard Package : 1
Category: Discrete Semiconductor Products
Family: Transistors (BJT) - Arrays, Pre-Biased
Series: -
Packaging : Cut Tape (CT)
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6
Dynamic Catalog: NPN Pre-Biased Transistor Arrays
Other Names: RN1905(T5LFT)CT