Image BCR 116S E6727
型号:

BCR 116S E6727

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体晶体管(BJT) - 阵列﹐预偏压式
描述: trans prebias dual npn sot363
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BCR 116S E6727的详细信息

Datasheets:
BCR116:
Product Photos:
SOT-363 PKG:
PCN Obsolescence/ EOL:
Multiple Devices 01/Mar/2011:
Standard Package : 3,000
Category: Discrete Semiconductor Products
Family: Transistors (BJT) - Arrays, Pre-Biased
Series: -
Packaging : Tape & Reel (TR)
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 150MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6
Other Names: SP000679396