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K4S643232H |
Samsung semiconductor |
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64mb H-die (x32) sdram specification |
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K4S643232H-TC/L50 |
Samsung semiconductor |
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64mb H-die (x32) sdram specification |
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M58BF008ZA |
STMicroelectronics |
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8 mbit 256kb x32, burst flash memory |
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K4S643232H-TC/L55 |
Samsung semiconductor |
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64mb H-die (x32) sdram specification |
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K4S643232H-TC/L60 |
Samsung semiconductor |
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64mb H-die (x32) sdram specification |
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K4S643232H-TC50 |
Samsung semiconductor |
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64mb H-die (x32) sdram specification |
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K4S643232H-TC/L70 |
Samsung semiconductor |
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64mb H-die (x32) sdram specification |
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K4S643232H-TC55 |
Samsung semiconductor |
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64mb H-die (x32) sdram specification |
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K4S643232H-TC70 |
Samsung semiconductor |
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64mb H-die (x32) sdram specification |
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K4S643232H-TL50 |
Samsung semiconductor |
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64mb H-die (x32) sdram specification |
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K4S643232H-TC60 |
Samsung semiconductor |
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64mb H-die (x32) sdram specification |
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K4S643232H-TL55 |
Samsung semiconductor |
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64mb H-die (x32) sdram specification |
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K4S643232H-TL60 |
Samsung semiconductor |
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64mb H-die (x32) sdram specification |
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K4S643232H-TL70 |
Samsung semiconductor |
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64mb H-die (x32) sdram specification |
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M58BF008B100ZA6T |
STMicroelectronics |
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8 mbit 256kb x32, burst flash memory |
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M58BF008B100D6T |
STMicroelectronics |
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8 mbit 256kb x32, burst flash memory |
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NAND01G-M |
STMicroelectronics |
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256/512mb/1gb (x8/x16, 1.8/3V, 528 byte page) nand flash memories + 256/512mb (x16/x32, 1.8V) lpsdram, mcp |
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NAND01GR3M5CZC5F |
STMicroelectronics |
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256/512mb/1gb (x8/x16, 1.8/3V, 528 byte page) nand flash memories + 256/512mb (x16/x32, 1.8V) lpsdram, mcp |
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NAND01GR3M5CZC5E |
STMicroelectronics |
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256/512mb/1gb (x8/x16, 1.8/3V, 528 byte page) nand flash memories + 256/512mb (x16/x32, 1.8V) lpsdram, mcp |
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NAND01GR3M5BZB5F |
STMicroelectronics |
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256/512mb/1gb (x8/x16, 1.8/3V, 528 byte page) nand flash memories + 256/512mb (x16/x32, 1.8V) lpsdram, mcp |