|
BB182LX,315 |
NXP Semiconductors |
|
半导体
分离式半导体
|
varactor diodes vhf 32v 62pf variable cap |
|
BB181LX,315 |
NXP Semiconductors |
|
半导体
分离式半导体
|
varactor diodes vhf 32v 17pf variable cap |
|
BBY40,235 |
NXP Semiconductors |
|
半导体
分离式半导体
|
varactor diodes vhf 30v 32pf variable cap |
|
BB179,335 |
NXP Semiconductors |
|
半导体
分离式半导体
|
varactor diodes uhf 30v 21.26pf variable cap |
|
BB181,335 |
NXP Semiconductors |
|
半导体
分离式半导体
|
varactor diodes vhf 30v 17pf variable cap |
|
BB178,335 |
NXP Semiconductors |
|
半导体
分离式半导体
|
varactor diodes vhf 32v 42.35pf variable cap |
|
BB187,335 |
NXP Semiconductors |
|
半导体
分离式半导体
|
varactor diodes vhf 32v 34.2pf variable cap |
|
BB182,335 |
NXP Semiconductors |
|
半导体
分离式半导体
|
varactor diodes vhf 32v 62pf variable cap |
|
BB179B,335 |
NXP Semiconductors |
|
半导体
分离式半导体
|
varactor diodes uhf 32v 20pf variable cap |
|
BB 644 E7904 |
Infineon Technologies |
|
半导体
分离式半导体
|
varactor diodes silicon variable capacitance diodes |
|
1SV281(TPH3,F) |
Toshiba |
|
半导体
分离式半导体
|
varactor diodes variable capacitance diodes |
|
1SV279,H3F |
Toshiba |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching variable cap 15v 2.5 CT 16pf 0.2 |
|
1SV305,H3F |
Toshiba |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching variable cap diode 10v 19.3pf 0.27 |
|
1SV323,H3F |
Toshiba |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching variable cap diode 10v Vr 4.3 0.4ohm |
|
JDV2S10FS(TPL3) |
Toshiba |
|
半导体
分离式半导体
|
varactor diodes variable cap diode 10v Vr 2.55ct 8.4pf |
|
JDV2S09FSTPL3 |
Toshiba |
|
半导体
分离式半导体
|
varactor diodes variable cap diode 10v Vr 2.1ct 11pf |
|
JDV2S41FS(TPL3) |
Toshiba |
|
半导体
分离式半导体
|
varactor diodes variable cap diode 15v Vr 2.5ct 16pf |
|
MAX2642EXT-T |
Maxim Integrated |
|
半导体
射频半导体
|
RF amplifier 900mhz sige high variable ip3 |
|
MAX2643EXT-T |
Maxim Integrated |
|
半导体
射频半导体
|
RF amplifier 900mhz sige high variable ip3 |
|
MAX2644EXT-T |
Maxim Integrated |
|
半导体
射频半导体
|
RF amplifier 2.4ghz sige high variable ip3 |