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BF998 |
Siemens Semiconductor Group |
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silicon N channel mosfet tetrode (short-channel transistor with high S/C quality factor for low-noise, gain-controlled input stages up to 1 ghz) |
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BF998 |
Infineon Technologies |
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silicon N-channel mosfet tetrode |
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BF998A |
Vishay Siliconix |
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N-channel dual gate mos-fieldeffect tetrode, depletion mode |
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BF998B |
Vishay Siliconix |
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N-channel dual gate mos-fieldeffect tetrode, depletion mode |
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BF998R |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (short-channel transistor with high S/C quality factor) |
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BF998R |
Vishay Siliconix |
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N-channel dual gate mos-fieldeffect tetrode, depletion mode |
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BF998R |
Infineon Technologies |
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silicon N-channel mosfet tetrode |
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BF998RW |
Vishay Siliconix |
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N-channel dual gate mos-fieldeffect tetrode, depletion mode |
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BF998W |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (short-channel transistor with high S/C quality factor) |
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BF998W |
Infineon Technologies |
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silicon N-channel mosfet tetrode |
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BF5030W |
Infineon Technologies |
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silicon N-channel mosfet tetrode |
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BF5020R |
Infineon Technologies |
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silicon N-channel mosfet tetrode |
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BF5020W |
Infineon Technologies |
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silicon N-channel mosfet tetrode |
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BF5020 |
Infineon Technologies |
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silicon N-channel mosfet tetrode |
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BF988_08 |
Vishay Siliconix |
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N-channel dual gate mos-fieldeffect tetrode, depletion mode |
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Q62702-F1498 |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 5V integrated stabilized bias network) |
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Q62702-F1586 |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (short-channel transistor with high S/C quality factor) |
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Q62702-F1587 |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low-noise, gain-controlled input stages up to 1 ghz) |
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Q62702-F1613 |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 9 V integrated stabilized bias network |
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Q62702-F1627 |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 5V integrated stabilized bias network) |