|
BF996SB |
Vishay Siliconix |
|
|
N.channel dual gate mos-fieldeffect tetrode, depletion mode |
|
BF998RA |
Vishay Siliconix |
|
|
N-channel dual gate mos-fieldeffect tetrode, depletion mode |
|
BF998RAW |
Vishay Siliconix |
|
|
N-channel dual gate mos-fieldeffect tetrode, depletion mode |
|
BF998RB |
Vishay Siliconix |
|
|
N-channel dual gate mos-fieldeffect tetrode, depletion mode |
|
BF998RBW |
Vishay Siliconix |
|
|
N-channel dual gate mos-fieldeffect tetrode, depletion mode |
|
BF960 |
Vishay Telefunken |
|
|
N-channel dual gate mos-fieldeffect tetrode.depletion mode |
|
BF964 |
Vishay Siliconix |
|
|
N-channel dual gate mos-fieldeffect tetrode, depletion mode |
|
BF964S |
Vishay Siliconix |
|
|
N-channel dual gate mos-fieldeffect tetrode, depletion mode |
|
BF966S |
Vishay Siliconix |
|
|
N-channel dual gate mos-fieldeffect tetrode, depletion mode |
|
BG3140R |
Infineon Technologies |
|
|
dual N-channel mosfet tetrode |
|
BG3230 |
Infineon Technologies |
|
|
dual N-channel mosfet tetrode |
|
BG3230R |
Infineon Technologies |
|
|
dual N-channel mosfet tetrode |
|
BF1005 |
Siemens Semiconductor Group |
|
|
silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 5V integrated stabilized bias network) |
|
BF1005 |
Infineon Technologies |
|
|
silicon N-channel mosfet tetrode |
|
BF1005R |
Infineon Technologies |
|
|
silicon N-channel mosfet tetrode |
|
BF1005S |
Siemens Semiconductor Group |
|
|
silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 5V integrated stabilized bias network) |
|
BF1005S |
Infineon Technologies |
|
|
silicon N-channel mosfet tetrode |
|
BF1005SR |
Infineon Technologies |
|
|
silicon N-channel mosfet tetrode |
|
BF1005SW |
Infineon Technologies |
|
|
silicon N-channel mosfet tetrode |
|
BF1005W |
Infineon Technologies |
|
|
silicon N-channel mosfet tetrode |