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S29GL016A30FFIR22 |
Spansion Inc |
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64 megabit, 32 megabit, and 16 megabit 3.0-volt only page mode flash memory featuring 200 nm mirrorbit process technology |
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S29GL016A30TFI010 |
Spansion Inc |
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64 megabit, 32 megabit, and 16 megabit 3.0-volt only page mode flash memory featuring 200 nm mirrorbit process technology |
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S29GL016A30TAIR22 |
Spansion Inc |
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64 megabit, 32 megabit, and 16 megabit 3.0-volt only page mode flash memory featuring 200 nm mirrorbit process technology |
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S29GL016A30TFI012 |
Spansion Inc |
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64 megabit, 32 megabit, and 16 megabit 3.0-volt only page mode flash memory featuring 200 nm mirrorbit process technology |
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S29GL016A30TFIR10 |
Spansion Inc |
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64 megabit, 32 megabit, and 16 megabit 3.0-volt only page mode flash memory featuring 200 nm mirrorbit process technology |
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S29GL016A30TAI013 |
Spansion Inc |
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64 megabit, 32 megabit, and 16 megabit 3.0-volt only page mode flash memory featuring 200 nm mirrorbit process technology |
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S29GL016A30TAIR20 |
Spansion Inc |
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64 megabit, 32 megabit, and 16 megabit 3.0-volt only page mode flash memory featuring 200 nm mirrorbit process technology |
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|
S29GL016A30TFIR20 |
Spansion Inc |
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|
64 megabit, 32 megabit, and 16 megabit 3.0-volt only page mode flash memory featuring 200 nm mirrorbit process technology |
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|
S29GL016A30TAIR13 |
Spansion Inc |
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|
64 megabit, 32 megabit, and 16 megabit 3.0-volt only page mode flash memory featuring 200 nm mirrorbit process technology |
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|
S29GL016A30TFIR13 |
Spansion Inc |
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|
64 megabit, 32 megabit, and 16 megabit 3.0-volt only page mode flash memory featuring 200 nm mirrorbit process technology |
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S29GL016A30TFIR22 |
Spansion Inc |
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64 megabit, 32 megabit, and 16 megabit 3.0-volt only page mode flash memory featuring 200 nm mirrorbit process technology |
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Y4044759K000B0W |
Vishay Siliconix |
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bulk metal? foil technology discrete chips with tcr of 2 ppm/？°C and tolerance to 0.005 % for use in hybrid circuits |
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Y4046759K000B0W |
Vishay Siliconix |
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bulk metal? foil technology discrete chips with tcr of 2 ppm/？°C and tolerance to 0.005 % for use in hybrid circuits |
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Y4045249K000B0W |
Vishay Siliconix |
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bulk metal? foil technology discrete chips with tcr of 2 ppm/？°C and tolerance to 0.005 % for use in hybrid circuits |
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Y4045249R000B0W |
Vishay Siliconix |
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bulk metal? foil technology discrete chips with tcr of 2 ppm/？°C and tolerance to 0.005 % for use in hybrid circuits |
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|
Y4475249K000B0W |
Vishay Siliconix |
|
|
bulk metal? foil technology discrete chips with tcr of 2 ppm/？°C and tolerance to 0.005 % for use in hybrid circuits |
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|
Y4471759R000B0W |
Vishay Siliconix |
|
|
bulk metal? foil technology discrete chips with tcr of 2 ppm/？°C and tolerance to 0.005 % for use in hybrid circuits |
|
|
Y4047249K000B0W |
Vishay Siliconix |
|
|
bulk metal? foil technology discrete chips with tcr of 2 ppm/？°C and tolerance to 0.005 % for use in hybrid circuits |
|
|
Y4471759K000B0W |
Vishay Siliconix |
|
|
bulk metal? foil technology discrete chips with tcr of 2 ppm/？°C and tolerance to 0.005 % for use in hybrid circuits |
|
|
Y4475249R000B0W |
Vishay Siliconix |
|
|
bulk metal? foil technology discrete chips with tcr of 2 ppm/？°C and tolerance to 0.005 % for use in hybrid circuits |
