|
BCR 146 E6327 |
Infineon Technologies |
  |
半导体
分离式半导体
|
transistors switching - resistor biased npn silicon digital transistor |
|
CD0603-T05C |
Bourns Inc. |
|
半导体
分离式半导体
|
tvs diodes - transient voltage suppressors switching chip diode 5volt |
|
DA4J101K0R |
Panasonic |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching switch diode flt LD 2.0x2.1mm |
|
BCR 133 E6433 |
Infineon Technologies |
|
半导体
分离式半导体
|
transistors switching - resistor biased npn silicon digital transistor |
|
BCR 108 E6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
transistors switching - resistor biased AF trans digital bjt npn 50v 100ma |
|
|
BCR 133 E6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
transistors switching - resistor biased AF trans digital bjt npn 50v 100ma |
|
|
CD0603-T24C |
Bourns Inc. |
|
半导体
分离式半导体
|
tvs diodes - transient voltage suppressors switching chip diode 24volt |
|
BAV 70S H6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching AF digital transistor |
|
RGF1D-E3/67A |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 1 amp 200 volt 150ns 30 amp ifsm |
|
|
RGF1M-E3/67A |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 1 amp 1000volt 500ns 30 amp ifsm |
|
|
RGF1J-E3/67A |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 1 amp 600 volt 250ns 30 amp ifsm |
|
BAS 3005B-02V H6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching AF schottky diode |
|
BAS 16U E6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching silicon switch diode |
|
|
BAS 16-03W E6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching silicon switch diode |
|
CPH3351-TL-H |
ON Semiconductor |
|
半导体
分离式半导体
|
mosfet switching device |
|
DMC261030R |
Panasonic |
|
半导体
分离式半导体
|
transistors switching - resistor biased composite transistor GL wng 2.9x2.8mm |
|
|
CPH3348-TL-E |
ON Semiconductor |
|
半导体
分离式半导体
|
mosfet switching device |
|
DMG264040R |
Panasonic |
|
半导体
分离式半导体
|
transistors switching - resistor biased composite transistor GL wng 2.9x2.8mm |
|
CD0603-B0140L |
Bourns Inc. |
|
半导体
分离式半导体
|
schottky diodes & rectifiers switching chip diode 40volt |
|
|
BAT 18-04 E6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
pin diodes silicon RF switching diode |
