|
BAS 16U E6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching silicon switch diode |
|
BAS 16-03W E6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching silicon switch diode |
|
CPH3351-TL-H |
ON Semiconductor |
|
半导体
分离式半导体
|
mosfet switching device |
|
DMC261030R |
Panasonic |
|
半导体
分离式半导体
|
transistors switching - resistor biased composite transistor GL wng 2.9x2.8mm |
|
CPH3348-TL-E |
ON Semiconductor |
|
半导体
分离式半导体
|
mosfet switching device |
|
DMG264040R |
Panasonic |
|
半导体
分离式半导体
|
transistors switching - resistor biased composite transistor GL wng 2.9x2.8mm |
|
CD0603-B0140L |
Bourns Inc. |
|
半导体
分离式半导体
|
schottky diodes & rectifiers switching chip diode 40volt |
|
BAT 18-04 E6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
pin diodes silicon RF switching diode |
|
BCR 133W H6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
transistors switching - resistor biased AF digital transistor |
|
SMBD 7000 E6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching AF diode 100v 0.2A |
|
BCR 185W H6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
transistors switching - resistor biased AF digital transistor |
|
BAV 199 E6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching AF std recovery rectifier 85v 0.2A |
|
BCR 116W H6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
transistors switching - resistor biased AF digital transistor |
|
DRA3114E0L |
Panasonic |
|
半导体
分离式半导体
|
transistors switching - resistor biased trans W/ blt-IN res flt LD 1.2x1.2mm |
|
DRC3143Z0L |
Panasonic |
|
半导体
分离式半导体
|
transistors switching - resistor biased trans W/ blt-IN res flt LD 1.2x1.2mm |
|
DRA3144E0L |
Panasonic |
|
半导体
分离式半导体
|
transistors switching - resistor biased trans W/ blt-IN res flt LD 1.2x1.2mm |
|
DRC3114T0L |
Panasonic |
|
半导体
分离式半导体
|
transistors switching - resistor biased trans W/ blt-IN res flt LD 1.2x1.2mm |
|
DRC3144W0L |
Panasonic |
|
半导体
分离式半导体
|
transistors switching - resistor biased trans W/ blt-IN res flt LD 1.2x1.2mm |
|
BAT 18-05 E6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
pin diodes silicon RF switching diode |
|
BAS21VD,135 |
NXP Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching diode SW triple |