|
MMSD914 |
Fairchild Semiconductor |
 |
半导体
分离式半导体
|
diodes - general purpose, power, switching Hi conductance fast |
|
DRC5143E0L |
Panasonic |
|
半导体
分离式半导体
|
transistors switching - resistor biased trans W/ blt-IN res flt LD 2.0x2.1mm |
|
|
DRA5114Y0L |
Panasonic |
|
半导体
分离式半导体
|
transistors switching - resistor biased trans W/ blt-IN res flt LD 2.0x2.1mm |
|
|
DRA9114Y0L |
Panasonic |
|
半导体
分离式半导体
|
transistors switching - resistor biased trans W/ blt-IN res flt LD 1.6x1.6mm |
|
BAS45AL,115 |
NXP Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching low leak 125v 250ma |
|
BAT 54-02V H6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching AF schottky diode |
|
SMUN2212T1G |
ON Semiconductor |
 |
半导体
分离式半导体
|
transistors switching - resistor biased SS sc59 BR xstr npn spcl |
|
|
DRC5114E0L |
Panasonic |
|
半导体
分离式半导体
|
transistors switching - resistor biased trans W/ blt-IN res flt LD 2.0x2.1mm |
|
BAS28,215 |
NXP Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching SW 75v 215ma HS |
|
|
DRA5124E0L |
Panasonic |
|
半导体
分离式半导体
|
transistors switching - resistor biased trans W/ blt-IN res flt LD 2.0x2.1mm |
|
BAS 21 E6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching AF diode 250v 0.25a |
|
M1MA151WKT1G |
ON Semiconductor |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching SS swch dio 40v TR |
|
RGL34G-E3/98 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 400 volt 0.5A 150ns 10 amp ifsm |
|
|
DA3S101F0L |
Panasonic |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching switch diode flt LD 1.6x1.6mm |
|
BAW101S,115 |
NXP Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching diode SW tape-7 |
|
DMA961040R |
Panasonic |
|
半导体
分离式半导体
|
transistors switching - resistor biased comp trans W/blt IN res flt LD 1.6x1.6mm |
|
RGF1B-E3/67A |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 1 amp 100 volt 150ns 30 amp ifsm |
|
BCR 141 E6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
transistors switching - resistor biased npn silicon digital transistor |
|
BAS 70-05W H6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching AF schottky diode |
|
|
BCR 129 E6327 |
Infineon Technologies |
|
半导体
分离式半导体
|
transistors switching - resistor biased npn silicon digital transistor |
