|
PIMD2,125 |
NXP Semiconductors |
 |
半导体
分离式半导体
|
transistors switching - resistor biased transdigital bjt npn pnp 50v 100ma 6-pin |
|
BAS321,135 |
NXP Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching diode ult fast recov rectifier 250v 0.25a |
|
PUMD12,135 |
NXP Semiconductors |
|
半导体
分离式半导体
|
transistors switching - resistor biased npn/npn resistor equipped transistor |
|
|
PUMD10,125 |
NXP Semiconductors |
|
半导体
分离式半导体
|
transistors switching - resistor biased trans digital bjt npn/pnp 50v 6-pin |
|
D650S12T |
Infineon Technologies |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching fast diode 1200v 620a |
|
|
D650S14T |
Infineon Technologies |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching fast diode 1400v 620a |
|
|
MA4AGBLP912 |
MACOM |
 |
半导体
分离式半导体
|
pin diodes .1-40ghz 5ns switching speed |
|
1N4148WT-7 |
Diodes Incorporated |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 100v Io/150ma T/R |
|
|
1SS400GT2R |
Rohm Semiconductor |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching switch 100ma 90v |
|
|
IMB10AT110 |
Rohm Semiconductor |
|
半导体
分离式半导体
|
transistors switching - resistor biased dual pnp 50v 100ma sot-457 |
|
DDTC143ZLP-7 |
Diodes Incorporated |
|
半导体
分离式半导体
|
transistors switching - resistor biased 250mw 4.7kohm |
|
|
DTDG23YPT100 |
Rohm Semiconductor |
|
半导体
分离式半导体
|
transistors switching - resistor biased npn 60v 1A |
|
|
DA221TL |
Rohm Semiconductor |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching switch 20v 100ma |
|
|
CLL914 TR |
Central Semiconductor |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 100v 1A |
|
CMPD6001S TR |
Central Semiconductor |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching dual In series low leakage |
|
|
NSB8DT/81 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 200 volt 8.0 amp 125 amp ifsm |
|
|
NSB8BT/81 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 100 volt 8.0 amp 125 amp ifsm |
|
|
NSB8GT/81 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 400 volt 8.0 amp 125 amp ifsm |
|
|
NSB8JT/81 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 600 volt 8.0 amp 125 amp ifsm |
|
|
NSB8AT/81 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 50 volt 8.0 amp 125 amp ifsm |
