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BFN22 |
Siemens Semiconductor Group |
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npn silicon high-voltage transistor (suitable for video output stages in TV sets and switching power supplies high breakdown voltage) |
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BFN23 |
Siemens Semiconductor Group |
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pnp silicon high-voltage transistor (suitable for video output stages in TV sets and switching power supplies high breakdown voltage) |
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BDP950 |
Siemens Semiconductor Group |
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pnp silicon AF power transistor (for AF drivers and output stages high collector current high current gain) |
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Q68000-A8615 |
Siemens Semiconductor Group |
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gaas mmic (two stages monolithic microwave IC mmicAmplifier all gold metallisation) |
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BFX55 |
Siemens Semiconductor Group |
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npn silicon transistor for vhf output stages IN broadband amplifiers |
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BFG135A |
Siemens Semiconductor Group |
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npn silicon RF transistor (for low-distortion broadband output amplifier stages in antenna and telecommunications) |
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BFG235 |
Siemens Semiconductor Group |
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npn silicon RF transistor (for low-distortion broadband output amplifier stages in antenna and telecommunications) |
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BF1005 |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 5V integrated stabilized bias network) |
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BF1005S |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 5V integrated stabilized bias network) |
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BF1009 |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 9 V integrated stabilized bias network |
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BF1009S |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 9V integrated bias network) |
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BF1012 |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 12v integrated stabilized bias network |
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BF1012S |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 5V integrated stabilized bias network) |
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BF1012W |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low-noise, gain-controlled input stages up to 1 ghz) |
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BF2000W |
Siemens Semiconductor Group |
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silicon N channel mosfet tetrode (short-channel transistor with high S/C quality factor for low-noise, gain-controlled input stages up to 1 ghz) |
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BF2030 |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 5V) |
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BF2030W |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 5V) |
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BF2040 |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 5V) |
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BF2040W |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 5V) |
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BDP953 |
Siemens Semiconductor Group |
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npn silicon AF power transistors (for AF drivers and output stages high collector current high current gain) |