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BC857BW |
Siemens Semiconductor Group |
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pnp silicon AF transistors (for AF input stages and driver applications high current gain low collector-emitter saturation voltage) |
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BC857C |
Siemens Semiconductor Group |
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pnp silicon AF transistors (for AF input stages and driver applications high current gain low collector-emitter saturation voltage) |
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BC857CW |
Siemens Semiconductor Group |
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pnp silicon AF transistors (for AF input stages and driver applications high current gain low collector-emitter saturation voltage) |
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BC857S |
Siemens Semiconductor Group |
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pnp silicon AF transistor array (for AF input stages and driver applications high current gain low collector-emitter saturation voltage) |
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BC859A |
Siemens Semiconductor Group |
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pnp silicon AF transistors (for AF input stages and driver applications high current gain low collector-emitter saturation voltage) |
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Q62702-F1498 |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 5V integrated stabilized bias network) |
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Q62702-F1582 |
Siemens Semiconductor Group |
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pnp silicon RF transistor (for oscillators, mixer and self-oscillating mixer stages in uhf TV-tuner) |
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Q62702-F1587 |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low-noise, gain-controlled input stages up to 1 ghz) |
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Q62702-F1613 |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 9 V integrated stabilized bias network |
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Q62702-F1627 |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 5V integrated stabilized bias network) |
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Q62702-F1628 |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 9V integrated bias network) |
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Q62702-F1665 |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 5V integrated stabilized bias network) |
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Q62702-F1772 |
Siemens Semiconductor Group |
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silicon N channel mosfet tetrode (short-channel transistor with high S/C quality factor for low-noise, gain-controlled input stages up to 1 ghz) |
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Q62702-F1773 |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 5V) |
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Q62702-F1774 |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 5V) |
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Q62702-F1775 |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 5V) |
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Q62702-F1776 |
Siemens Semiconductor Group |
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silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 5V) |
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Q62702-D1335 |
Siemens Semiconductor Group |
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npn silicon AF power transistors (for AF drivers and output stages high collector current high current gain) |
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Q62702-D1336 |
Siemens Semiconductor Group |
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pnp silicon AF power transistor (for AF drivers and output stages high collector current high current gain) |
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Q62702-D1337 |
Siemens Semiconductor Group |
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npn silicon AF power transistors (for AF drivers and output stages high collector current high current gain) |