关键词specif
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图片 型号 厂商 标准 分类 描述
Image: FDW2504 FDW2504 Fairchild Semiconductor 半导体 dual P-channel 2.5V specified powertrench mosfet
Image: FDW2501NZ_08 FDW2501NZ_08 Fairchild Semiconductor dual N-channel 2.5V specified powertrench mosfet
Image: FDW2508 FDW2508 Fairchild Semiconductor 半导体 dual P-channel 1.8 V specified powertrench mosfet
Image: FDW2509NZ FDW2509NZ Fairchild Semiconductor common drain N-channel 2.5V specified powertrench mosfet
Image: FDW2504P_02 FDW2504P_02 Fairchild Semiconductor dual P-channel 2.5V specified powertrench mosfet
Image: FDY3000NZ_07 FDY3000NZ_07 Fairchild Semiconductor dual N-channel 2.5V specified powertrench mosfet
Image: PHM008 PHM008 Polyfet RF Devices the phm008 is a dual stage amplifier specifically designed for land mobile
Image: LD1207 LD1207 ETC the ld1207 is specifically designed for led display drivers
Image: NSVA397 NSVA397 New Japan Radio 422.2mhz specified low power radio station
Image: B3-28 B3-28 ETC specifically designed for vhf broadband linear power amplifier
Image: RD100HHF1 RD100HHF1 Mitsubishi Electric mos fet type transistor specifically designed for HF high power amplifiers applications.
Image: SI692DQ SI692DQ Fairchild Semiconductor dual N-channel 2.5V specified powertrench mosfet
Image: SI6926DQ SI6926DQ Fairchild Semiconductor dual N-channel 2.5V specified powertrench mosfet
Image: NSVS614 NSVS614 New Japan Radio 429.42 mhz specified low power radio station
Image: AN202 AN202 ETC testing and specifying fast logic
Image: FDG6308 FDG6308 Fairchild Semiconductor 半导体 P-channel 1.8V specified powertrench mosfet
Image: FDJ129 FDJ129 Fairchild Semiconductor P-channel -2.5 vgs specified powertrench mosfet
Image: FDG326 FDG326 Fairchild Semiconductor 半导体 P-channel 1.8V specified powertrench mosfet
Image: FDW2509 FDW2509 Fairchild Semiconductor common drain N-channel 2.5V specified powertrench mosfet
Image: SI6966 SI6966 Fairchild Semiconductor dual N-channel 2.5V specified powertrench mosfet