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K6R1008C1B-I12 |
Samsung semiconductor |
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128kx8 bit high speed static ram5v operating, revolutionary pin out. operated at commercial and industrial temperature ranges. |
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AS7C1025A-15JC |
Alliance Semiconductor Corporation |
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5V/3.3V 128k X 8 cmos sram (revolutionary pinout) |
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KM681002BTI-10 |
Samsung semiconductor |
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128kx8 bit high speed static ram(5V operating), revolutionary pin out. operated at commercial and industrial temperature range. |
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KM681002AI-15 |
Samsung semiconductor |
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128kx8 high speed static ram5v operating, revolutionary pin out. operated at commercial and industrial temperature range. |
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KM681002B-12 |
Samsung semiconductor |
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128kx8 bit high speed static ram(5V operating), revolutionary pin out. operated at commercial and industrial temperature range. |
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KM681002BTI-12 |
Samsung semiconductor |
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128kx8 bit high speed static ram(5V operating), revolutionary pin out. operated at commercial and industrial temperature range. |
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KM681002BI-12 |
Samsung semiconductor |
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128kx8 bit high speed static ram(5V operating), revolutionary pin out. operated at commercial and industrial temperature range. |
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AS7C1025 |
Alliance Semiconductor Corporation |
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5V/3.3V 128k x8 cmos sram (revolutionary pinout) |
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AS7C1025-12TJI |
Alliance Semiconductor Corporation |
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5V/3.3V 128k x8 cmos sram (revolutionary pinout) |
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AS7C1025-12TJC |
Alliance Semiconductor Corporation |
|
|
5V/3.3V 128k x8 cmos sram (revolutionary pinout) |
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K6R1008V1B |
Samsung semiconductor |
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128kx8 bit high speed static ram(3.3V operating), revolutionary pin out. operated at commercial and industrial temperature ranges |
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AS7C1025-15JC |
Alliance Semiconductor Corporation |
|
|
5V/3.3V 128k x8 cmos sram (revolutionary pinout) |
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K6R1008V1B-I-P |
Samsung semiconductor |
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128kx8 bit high speed static ram(3.3V operating), revolutionary pin out. operated at commercial and industrial temperature ranges |
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K6R1008V1B-I8 |
Samsung semiconductor |
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128kx8 bit high speed static ram(3.3V operating), revolutionary pin out. operated at commercial and industrial temperature ranges |
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K6R1008V1B-I12 |
Samsung semiconductor |
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128kx8 bit high speed static ram(3.3V operating), revolutionary pin out. operated at commercial and industrial temperature ranges |
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K6R1008V1B-I10 |
Samsung semiconductor |
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128kx8 bit high speed static ram(3.3V operating), revolutionary pin out. operated at commercial and industrial temperature ranges |
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K6R1008V1B-C8 |
Samsung semiconductor |
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128kx8 bit high speed static ram(3.3V operating), revolutionary pin out. operated at commercial and industrial temperature ranges |
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KM681002AI-12 |
Samsung semiconductor |
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128kx8 high speed static ram5v operating, revolutionary pin out. operated at commercial and industrial temperature range. |
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KM681002A-15 |
Samsung semiconductor |
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128kx8 high speed static ram5v operating, revolutionary pin out. operated at commercial and industrial temperature range. |
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KM681002AI |
Samsung semiconductor |
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128kx8 high speed static ram5v operating, revolutionary pin out. operated at commercial and industrial temperature range. |