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K6R1004C1A |
Samsung semiconductor |
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256kx4 high speed static ram(5V operating), revolutionary pin out |
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K6R1004C1A-15 |
Samsung semiconductor |
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256kx4 high speed static ram(5V operating), revolutionary pin out |
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K6R1004C1A-C12 |
Samsung semiconductor |
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256kx4 high speed static ram(5V operating), revolutionary pin out |
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AS7C1025A-15TJI |
Alliance Semiconductor Corporation |
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5V/3.3V 128k X 8 cmos sram (revolutionary pinout) |
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AS7C1025A-15TJC |
Alliance Semiconductor Corporation |
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5V/3.3V 128k X 8 cmos sram (revolutionary pinout) |
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AS7C1025A-20TJI |
Alliance Semiconductor Corporation |
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5V/3.3V 128k X 8 cmos sram (revolutionary pinout) |
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AS7C1025A-20TJC |
Alliance Semiconductor Corporation |
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5V/3.3V 128k X 8 cmos sram (revolutionary pinout) |
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AS7C1025A-15JI |
Alliance Semiconductor Corporation |
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5V/3.3V 128k X 8 cmos sram (revolutionary pinout) |
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AS7C1025A-12TC |
Alliance Semiconductor Corporation |
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5V/3.3V 128k X 8 cmos sram (revolutionary pinout) |
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AS7C1025A-20JI |
Alliance Semiconductor Corporation |
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5V/3.3V 128k X 8 cmos sram (revolutionary pinout) |
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AS7C1025-15TJI |
Alliance Semiconductor Corporation |
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5V/3.3V 128k x8 cmos sram (revolutionary pinout) |
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KM681002BTI-8 |
Samsung semiconductor |
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128kx8 bit high speed static ram(5V operating), revolutionary pin out. operated at commercial and industrial temperature range. |
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K6R1004C1A-12 |
Samsung semiconductor |
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256kx4 high speed static ram(5V operating), revolutionary pin out |
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K6R1004C1A-C20 |
Samsung semiconductor |
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256kx4 high speed static ram(5V operating), revolutionary pin out |
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K6R1004C1A-J20 |
Samsung semiconductor |
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256kx4 high speed static ram(5V operating), revolutionary pin out |
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K6R1004C1A-J12 |
Samsung semiconductor |
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256kx4 high speed static ram(5V operating), revolutionary pin out |
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K6R1004C1B-10 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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K6R1004C1B-12 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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K6R1004C1A-J15 |
Samsung semiconductor |
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256kx4 high speed static ram(5V operating), revolutionary pin out |
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K6R1004C1B-C10 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |