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SPN02N60C3_05 |
Infineon Technologies |
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new revolutionary high voltage technology ultra low gate charge ultra low effective capacitances |
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SPS02N60C3_09 |
Infineon Technologies |
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cool mos power transistor feature new revolutionary high voltage technology |
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SPP02N60C3_07 |
Infineon Technologies |
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cool mos? power transistor feature new revolutionary high voltage technology |
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SPB02N60S5_07 |
Infineon Technologies |
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cool mos? power transistor feature new revolutionary high voltage technology |
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SPP02N60S5_09 |
Infineon Technologies |
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cool mos? power transistor feature new revolutionary high voltage technology |
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KM681002BJ-12 |
Samsung semiconductor |
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128kx8 bit high speed static ram(5V operating), revolutionary pin out. operated at commercial and industrial temperature range. |
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K6R1004C1A-C15 |
Samsung semiconductor |
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256kx4 high speed static ram(5V operating), revolutionary pin out |
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K6R1008V1B-C-L |
Samsung semiconductor |
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128kx8 bit high speed static ram(3.3V operating), revolutionary pin out. operated at commercial and industrial temperature ranges |
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AS7C1025-12JC |
Alliance Semiconductor Corporation |
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5V/3.3V 128k x8 cmos sram (revolutionary pinout) |
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K6R1004C1B-8 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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K6R1004C1B-J12 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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K6R1004C1B-J10 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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K6R1004C1B-J8 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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AS7C1025A-10TJI |
Alliance Semiconductor Corporation |
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5V/3.3V 128k X 8 cmos sram (revolutionary pinout) |
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AS7C1025A-12JI |
Alliance Semiconductor Corporation |
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5V/3.3V 128k X 8 cmos sram (revolutionary pinout) |
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KM684002 |
Samsung semiconductor |
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512kx8 bit high speed static ram(5V operating), revolutionary pin out. operated at commercial, extended and industrial temperature range. |
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K6R1004C1B |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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K6R1008C1B-C8 |
Samsung semiconductor |
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128kx8 bit high speed static ram5v operating, revolutionary pin out. operated at commercial and industrial temperature ranges. |
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K6R1008C1B-I10 |
Samsung semiconductor |
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128kx8 bit high speed static ram5v operating, revolutionary pin out. operated at commercial and industrial temperature ranges. |
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K6R1008C1B-I8 |
Samsung semiconductor |
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128kx8 bit high speed static ram5v operating, revolutionary pin out. operated at commercial and industrial temperature ranges. |