图片 |
型号 |
厂商 |
标准 |
分类 |
描述 |
|
FSYC163D1 |
Intersil Corporation |
|
|
radiation hardened, segr resistant N-channel power mosfets |
|
FSYC160R3 |
Intersil Corporation |
|
|
radiation hardened, segr resistant, N-channel power mosfets |
|
FSYC163R3 |
Intersil Corporation |
|
|
radiation hardened, segr resistant N-channel power mosfets |
|
FSYC163R1 |
Intersil Corporation |
|
|
radiation hardened, segr resistant N-channel power mosfets |
|
FSYC163R |
Intersil Corporation |
|
|
radiation hardened, segr resistant N-channel power mosfets |
|
FSYC163R4 |
Intersil Corporation |
|
|
radiation hardened, segr resistant N-channel power mosfets |
|
OB2WA |
NXP Semiconductors |
|
|
special quality, shock and vibration resistant valtage stabilizer tube |
|
099-0080-900 |
Sensortechnics GmbH |
|
|
ultra-high leak integrity media resistant soleniod valves |
|
15-000200 |
CONEC |
|
|
water resistant screen cap |
|
189HS016M1111-3B |
Glenair |
|
|
backshell with banding strain relief environmental resistant |
|
189HN016M1111-3B |
Glenair |
|
|
backshell with banding strain relief environmental resistant |
|
189HM016M1111-3B |
Glenair |
|
|
backshell with banding strain relief environmental resistant |
|
099-0107-900 |
Sensortechnics GmbH |
|
|
ultra-high leak integrity media resistant soleniod valves |
|
189HS016M1113-3B |
Glenair |
|
|
backshell with banding strain relief environmental resistant |
|
189HM016M1113-3B |
Glenair |
|
|
backshell with banding strain relief environmental resistant |
|
189HN016M1113-3B |
Glenair |
|
|
backshell with banding strain relief environmental resistant |
|
MX043J |
Microsemi Corporation |
|
|
radiation hardened segr-resistant N-channel enhancement mode power mosfet |
|
MX043G |
Microsemi Corporation |
|
|
radiation hardened segr-resistant N-channel enhancement mode power mosfet |
|
189HN016M1309-3B |
Glenair |
|
|
backshell with banding strain relief environmental resistant |
|
189HM016M1305-3B |
Glenair |
|
|
backshell with banding strain relief environmental resistant |