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HYB5117805BSJ-50-60 |
Siemens Semiconductor Group |
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2M x 8-bit dynamic ram 2k refresh |
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HM5117805J-5 |
Elpida Memory |
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16 M edo dram (2-mword X 8-bit) 2 k refresh |
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HM5117805J-6 |
Elpida Memory |
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16 M edo dram (2-mword X 8-bit) 2 k refresh |
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HM5117805J-7 |
Elpida Memory |
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16 M edo dram (2-mword X 8-bit) 2 k refresh |
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V53C808H35 |
Mosel Vitelic, Corp |
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high performance 1M x 8 bit edo page mode cmos dynamic ram optional self refresh |
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V53C808H40 |
Mosel Vitelic, Corp |
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high performance 1M x 8 bit edo page mode cmos dynamic ram optional self refresh |
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V53C808H45 |
Mosel Vitelic, Corp |
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high performance 1M x 8 bit edo page mode cmos dynamic ram optional self refresh |
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V53C808H50 |
Mosel Vitelic, Corp |
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high performance 1M x 8 bit edo page mode cmos dynamic ram optional self refresh |
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KMM53216000BKG |
Samsung semiconductor |
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16m x 32 dram simm using 16mx4, 4K refresh, 5V |
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KMM53232000BKG |
Samsung semiconductor |
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32m x 32 dram simm using 16mx4, 4K refresh, 5V |
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KMM53616000BKG |
Samsung semiconductor |
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16m x 36 dram simm using 16mx4 & 16mx1, 4K refresh, 5V |
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KMM53632000BKG |
Samsung semiconductor |
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32m x 36 dram simm using 16mx4 & 16mx1, 4K refresh, 5V |
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HYB5117400BJ-50 |
Siemens Semiconductor Group |
|
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4M x 4-bit dynamic ram 2k & 4k refresh |
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KMM372F3280BK3 |
Samsung semiconductor |
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32m x 72 dram dimm with ecc using 16mx4, 4K 8K refresh, 3.3V |
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KMM372F3200BK3 |
Samsung semiconductor |
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32m x 72 dram dimm with ecc using 16mx4, 4K 8K refresh, 3.3V |
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KMM372V3280BS1 |
Samsung semiconductor |
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32m x 72 dram dimm with ecc using 16mx4, 4K 8K refresh, 3.3V |
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KMM372V3200CK4 |
Samsung semiconductor |
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32m x 72 dram dimm with ecc using 16mx4, 4K 8K refresh, 3.3V |
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KMM372V3280CK4 |
Samsung semiconductor |
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32m x 72 dram dimm with ecc using 16mx4, 4K 8K refresh, 3.3V |
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KMM5324100CKG |
Samsung semiconductor |
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4M x 32 dram simm using 4mx4, 4K/2K refresh, 5V |
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KMM5324000CKG |
Samsung semiconductor |
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4M x 32 dram simm using 4mx4, 4K/2K refresh, 5V |