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M464S3254DTS-L7A/C7A |
Samsung semiconductor |
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32mx64 sdram sodimm based on 16mx16, 4banks, 8K refresh,3.3V synchronous drams with spd |
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M464S3254DTS-L7C/C7C |
Samsung semiconductor |
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32mx64 sdram sodimm based on 16mx16, 4banks, 8K refresh,3.3V synchronous drams with spd |
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MT4C4001JDJ-6 |
Micron Technology Inc |
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standard or self refresh |
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MT4C4001S-6 |
Micron Technology Inc |
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standard or self refresh |
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MT4C4001S-7 |
Micron Technology Inc |
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standard or self refresh |
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MT4C4001S-8 |
Micron Technology Inc |
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standard or self refresh |
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MT4C4001 |
Micron Technology Inc |
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standard or self refresh |
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MT4C4001J-6 |
Micron Technology Inc |
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standard or self refresh |
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MT4C4001J-7 |
Micron Technology Inc |
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standard or self refresh |
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MT4C4001J-8 |
Micron Technology Inc |
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standard or self refresh |
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MT4C4001JS-6 |
Micron Technology Inc |
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standard or self refresh |
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MT4C4001JS-7 |
Micron Technology Inc |
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standard or self refresh |
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MT4C4001JS-8 |
Micron Technology Inc |
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standard or self refresh |
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MT4C4001S |
Micron Technology Inc |
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standard or self refresh |
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HB56SW3272ESK |
Hitachi Semiconductor |
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256mb buffered edo dram dimm 32-mword x 72-bit, 4k refresh, 2 bank module(36 pcs of 16m x 4 components) |
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HB56SW3272ESK-5 |
Hitachi Semiconductor |
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256mb buffered edo dram dimm 32-mword x 72-bit, 4k refresh, 2 bank module(36 pcs of 16m x 4 components) |
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HB56SW3272ESK-6 |
Hitachi Semiconductor |
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256mb buffered edo dram dimm 32-mword x 72-bit, 4k refresh, 2 bank module(36 pcs of 16m x 4 components) |
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HM658512ALFP-10 |
Hitachi Semiconductor |
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4 M psram (512-kword x 8-bit) 2 k refresh |
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HM658512ALFP-10V |
Hitachi Semiconductor |
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4 M psram (512-kword x 8-bit) 2 k refresh |
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HYB5116400BJ-50-60 |
Siemens Semiconductor Group |
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4M x 4-bit dynamic ram 2k & 4k refresh |
