图片 |
型号 |
厂商 |
标准 |
分类 |
描述 |
|
BUZ101SL-4 |
Siemens Semiconductor Group |
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sipmos power transistor (quad-channel enhancement mode logic level avalanche-rated d v/d t rated) |
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BUZ102AL |
Siemens Semiconductor Group |
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sipmos power transistor (N channel enhancement mode avalanche-rated logic level d v/d t rated) |
|
BUZ102SL |
Siemens Semiconductor Group |
|
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sipmos power transistor (N channel enhancement mode logic level avalanche-rated dv/dt rated) |
|
BUZ103AL |
Siemens Semiconductor Group |
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sipmos power transistor (N channel enhancement mode avalanche-rated logic level d v/d t rated) |
|
BUZ103SL |
Siemens Semiconductor Group |
|
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sipmos power transistor (N channel enhancement mode logic level avalanche-rated dv/dt rated) |
|
BUZ104S |
Siemens Semiconductor Group |
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sipmos power transistor (N channel enhancement mode avalanche-rated dv/dt rated 175∑C operating temperature) |
|
BUZ104SL-4 |
Siemens Semiconductor Group |
|
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sipmos power transistor (quad-channel enhancement mode logic level avalanche-rated d v/d t rated) |
|
B82422-A1272-+100 |
EPCOS Inc |
|
|
size 1210 (eia) or 3225 (iec) rated inductance 0,0082 to 100 uH rated current 65 to 800 mA |
|
B82422-A1272-+ |
EPCOS Inc |
|
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size 1210 (eia) or 3225 (iec) rated inductance 0,0082 to 100 mH rated current 65 to 700 mA |
|
BUZ104L |
Siemens Semiconductor Group |
|
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sipmos power transistor (N channel enhancement mode avalanche-rated logic level d v/d t rated low on-resistance) |
|
BUZ104 |
Siemens Semiconductor Group |
|
|
sipmos power transistor (N channel enhancement mode avalanche-rated d v/d t rated low on-resistance) |
|
BUZ111SL |
Siemens Semiconductor Group |
|
|
sipmos power transistor (N channel enhancement mode logic level avalanche-rated dv/dt rated) |
|
B82432-A1272-K |
EPCOS Inc |
|
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size 1812 (eia) or 4532 (iec) rated inductance 1,0 to 1000 mH rated current 55 to 600 mA |
|
B82412-A1272-+ |
EPCOS Inc |
|
|
size 1210 (eia) or 3225 (iec) rated inductance 0,010 to 10 mH rated current 90 to 700 mA |
|
B82422-A1273-+ |
EPCOS Inc |
|
|
size 1210 (eia) or 3225 (iec) rated inductance 0,0082 to 100 mH rated current 65 to 700 mA |
|
BUZ103 |
Siemens Semiconductor Group |
|
|
sipmos power transistor (N channel enhancement mode avalanche-rated d v/d t rated low on-resistance) |
|
BUZ103S |
Siemens Semiconductor Group |
|
|
sipmos power transistor (N channel enhancement mode avalanche-rated dv/dt rated 175∑C operating temperature) |
|
BUZ100SL-4 |
Siemens Semiconductor Group |
|
|
sipmos power transistor (quad-channel enhancement mode logic level avalanche-rated d v/d t rated) |
|
BUZ102SL-4 |
Siemens Semiconductor Group |
|
|
sipmos power transistor (quad-channel enhancement mode logic level avalanche-rated d v/d t rated) |
|
BUZ103SL-4 |
Siemens Semiconductor Group |
|
|
sipmos power transistor (quad-channel enhancement mode logic level avalanche-rated d v/d t rated) |