关键词puls
标准
为您共找出"500+"个相关器件
图片 型号 厂商 标准 分类 描述
Image: NDL7512P NDL7512P NEC ingaasp strained mqw DC-pbh pulsed laser diode module 1310nm otdr application
Image: NDL7513P NDL7513P NEC ingaasp strained mqw DC-pbh pulsed laser diode module 1310nm otdr application
Image: NDL7513P1 NDL7513P1 NEC ingaasp strained mqw DC-pbh pulsed laser diode module 1310nm otdr application
Image: NDL7513P1C NDL7513P1C NEC ingaasp strained mqw DC-pbh pulsed laser diode module 1310nm otdr application
Image: NDL7513P1D NDL7513P1D NEC ingaasp strained mqw DC-pbh pulsed laser diode module 1310nm otdr application
Image: NDL7513PC NDL7513PC NEC ingaasp strained mqw DC-pbh pulsed laser diode module 1310nm otdr application
Image: NDL7513PD NDL7513PD NEC ingaasp strained mqw DC-pbh pulsed laser diode module 1310nm otdr application
Image: Q62702-P1759 Q62702-P1759 Siemens Semiconductor Group pulsed laser diode in plastic package 10 W peak class 3 laser product
Image: NX7363JB-BC NX7363JB-BC California Eastern Labs ingaasp mqw DC-pbh pulsed laser diode module 1 310 nm otdr application
Image: NX7363JB-BC-AZ NX7363JB-BC-AZ California Eastern Labs ingaasp mqw DC-pbh pulsed laser diode module 1 310 nm otdr application
Image: NX7663JB-BC NX7663JB-BC California Eastern Labs ingaasp mqw DC-pbh pulsed laser diode module 1 625 nm otdr application
Image: NX7663JB-BC-AZ NX7663JB-BC-AZ California Eastern Labs ingaasp mqw DC-pbh pulsed laser diode module 1 625 nm otdr application
Image: RF3833 RF3833 RF Micro Devices 半导体 RF 晶体管 (BJT) the rf3833 is a wideband power amplifier designed for CW and pulsed applications such as wireless infrastructure,
Image: RFHA3832 RFHA3832 RF Micro Devices 半导体 RF 晶体管 (BJT) the rfha3832 is a wideband power amplifier designed for CW and pulsed applications such as wireless infrastructure, radar,
Image: RFHA1028 RFHA1028 RF Micro Devices 半导体 RF 晶体管 (BJT) the rfha1028 is a 45v 160w two-stage high power amplifier designed for L-band pulsed radar
Image: ESDCAN03-2BM3Y ESDCAN03-2BM3Y STMicroelectronics 电路保护 浪涌抑制器 aec-q101 qualified dual-line esd and eos protection triggering voltage, vtrig min = 28 V qfn-3L 1.1 x 1.0 x 0.55 package also called dfn1110 bidirectional device max pulse power up to 3.3 A (8/20 μs) low clamping factor vcl / vbr low leakage current ecopack2 rohs compliant component ul94, V0 J-std-020 msl level 1 ipc7531 footprint and jedec registered package iso 16750-2 (jump start and reversed battery tests) iso 10605 / iec 61000-4-2- C = 150 pF, R = 330 Ω, exceeds level 4: ±15 kV (contact discharge) iso 10605 - C = 330 pF, R = 2 kΩ: ±30 kV (contact discharge) iso 10605 - C = 330 pF, R = 330 Ω: ±12 kV (contact discharge) iso 7637-3: pulse 3a: -150 V pulse 3b: +150 V pulse 2a: +/- 85 V
Image: LM96550SQE/NOPB LM96550SQE/NOPB Texas Instruments 半导体 射频半导体 RF front end ultrasound transmit pulser
Image: LM96551SQE/NOPB LM96551SQE/NOPB Texas Instruments 半导体 射频半导体 RF front end ultrasound transmit pulser
Image: HV7331K6-G HV7331K6-G Supertex 半导体 射频半导体 RF front end quad Hi-speed ultra- sound rtz pulser
Image: LM96550SQX/NOPB LM96550SQX/NOPB Texas Instruments 半导体 射频半导体 RF front end ultrasound transmit pulser

©2000-  21IC电子网版权所有

京ICP备11013301号 京公网安备 11010802024343号