关键词placement
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图片 型号 厂商 标准 分类 描述
Image: 2SB1360 2SB1360 ROHM Semiconductor taped power transistor package for use with AN automatic placement machine
Image: 2SB1369 2SB1369 ROHM Semiconductor taped power transistor package for use with AN automatic placement machine
Image: 2SD1930 2SD1930 ROHM Semiconductor 1.2W package power taped transistor designed for use with AN automatic placement mechine
Image: 2SD1931 2SD1931 ROHM Semiconductor 1.2W package power taped transistor designed for use with AN automatic placement mechine
Image: 2SD1932 2SD1932 ROHM Semiconductor taped power transistor package for use with AN automatic placement machine
Image: 2SA1634 2SA1634 ROHM Semiconductor taped power transistor package for use with AN automatic placement machine
Image: 2SA1635 2SA1635 ROHM Semiconductor taped power transistor package for use with AN automatic placement machine
Image: 2SB1428 2SB1428 ROHM Semiconductor 1.2W package power taped transistor designed for use with AN automatic placement mechine
Image: 2SC4205 2SC4205 ROHM Semiconductor taped power transistor package for use with AN automatic placement machine
Image: TPC16CAHM3/H TPC16CAHM3/H Vishay Semiconductors 电路保护 TVS二极管 ideal for automated placement
Image: TPC13CAHM3/H TPC13CAHM3/H Vishay Semiconductors 电路保护 TVS二极管 ideal for automated placement
Image: SM5420E-060-A-P-T SM5420E-060-A-P-T Silicon Microstructures, Inc. 传感器，变送器 压力传感器 e. performance is achieved through careful resistor placement and mechanical configuration along with advanced mems processing.
Image: SM5420E-100-A-P-T SM5420E-100-A-P-T Silicon Microstructures, Inc. 传感器，变送器 压力传感器 the sm5420e has been optimized to provide the highest possible stability for a package of this size. Performance is achieved through careful resistor placement and mechanical configuration along with advanced mems processing.
Image: SM5420E-060-A-H-T SM5420E-060-A-H-T Silicon Microstructures, Inc. 传感器，变送器 压力传感器 the sm5420e has been optimized to provide the highest possible stability for a package of this size. Performance is achieved through careful resistor placement and mechanical configuration along with advanced mems processing.

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