|
BCR5KM |
Mitsubishi Electric |
|
|
medium power use insulated type, planar passivation type |
|
BCR5AM |
Mitsubishi Electric |
|
|
medium power use non-insulated type, planar passivation type |
|
BCR5AS |
Mitsubishi Electric |
|
|
medium power use non-insulated type, planar passivation type |
|
CR2AM-8A |
Mitsubishi Electric |
|
|
low power use glass passivation type |
|
BCR3KM-12 |
Mitsubishi Electric |
|
|
low power use insulated type, planar passivation type |
|
CR02AM |
Mitsubishi Electric |
|
|
low power use planar passivation type |
|
CR02AM-4 |
Mitsubishi Electric |
|
|
low power use planar passivation type |
|
BCR6 |
Mitsubishi Electric |
|
|
medium power use non-insulated type, planar passivation type |
|
CR02 |
Mitsubishi Electric |
|
|
low power use planar passivation type |
|
DS1808 |
Maxim Integrated |
|
集成电路
|
process: 1P, 1M, 5.0um, 30v NF & PF, uvnd, uvpd ,N+esd,teos spacer, passivation w/nov teos oxide-nitride |
|
BCR30 |
Mitsubishi Electric |
|
|
medium power use non-insulated type, planar passivation type |
|
BCR5 |
Mitsubishi Electric |
|
|
medium power use non-insulated type, planar passivation type |
|
BCR3 |
Mitsubishi Electric |
|
|
low power use insulated type, planar passivation type |
|
BCR8 |
Mitsubishi Electric |
|
|
medium power use non-insulated type, planar passivation type |
|
CR04 |
Mitsubishi Electric |
|
|
low power use glass passivation type |
|
AG3A |
Diotec Semiconductor |
|
|
silicon rectifier cells with polysiloxan passivation |
|
AG3B |
Diotec Semiconductor |
|
|
silicon rectifier cells with polysiloxan passivation |
|
AG3D |
Diotec Semiconductor |
|
|
silicon rectifier cells with polysiloxan passivation |
|
AG3G |
Diotec Semiconductor |
|
|
silicon rectifier cells with polysiloxan passivation |
|
AG3J |
Diotec Semiconductor |
|
|
silicon rectifier cells with polysiloxan passivation |