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图片 型号 厂商 标准 分类 描述
Image: SI2303BDS_RC SI2303BDS_RC Vishay Siliconix R-C thermal model parameters
Image: SI4483EDY_RC SI4483EDY_RC Vishay Siliconix R-C thermal model parameters
Image: SI4496DY SI4496DY Vishay Siliconix R - C thermal model parameters
Image: SI4496DY-RC SI4496DY-RC Vishay Siliconix R - C thermal model parameters
Image: SI4434DY-RC SI4434DY-RC Vishay Siliconix R-C thermal model parameters
Image: SI4413ADY_RC SI4413ADY_RC Vishay Siliconix R-C thermal model parameters
Image: SI4416DY_RC SI4416DY_RC Vishay Siliconix R-C thermal model parameters
Image: ML920AA11S ML920AA11S Mitsubishi Electric notice : some parametric limits are subject to change ingaasp dfb laser diodes
Image: SI4856ADY-RC SI4856ADY-RC Vaishali Semiconductor R-C thermal model parameters
Image: MAX9952 MAX9952 Maxim Integrated dual per-pin parametric measurement units
Image: MAX9952FCCB MAX9952FCCB Maxim Integrated dual per-pin parametric measurement units
Image: EVAL-AD5520EB EVAL-AD5520EB Analog Devices Inc per pin parametric measurement unit/source measure unit
Image: MR16R16248EG0 MR16R16248EG0 Samsung semiconductor key timing parameters
Image: MR16R1624EG0-CK8 MR16R1624EG0-CK8 Samsung semiconductor key timing parameters
Image: MR16R1624EG0-CM8 MR16R1624EG0-CM8 Samsung semiconductor key timing parameters
Image: MR16R1624EG0-CT9 MR16R1624EG0-CT9 Samsung semiconductor key timing parameters
Image: MR16R1624GEG0 MR16R1624GEG0 Samsung semiconductor key timing parameters
Image: MR16R1628EG0-CK8 MR16R1628EG0-CK8 Samsung semiconductor key timing parameters
Image: MR16R1628EG0-CM8 MR16R1628EG0-CM8 Samsung semiconductor key timing parameters
Image: MR16R1628EG0-CT9 MR16R1628EG0-CT9 Samsung semiconductor key timing parameters

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