|
IRF633 |
Fairchild Semiconductor |
|
|
N-channel power mosfets, 12a, 150-200 V |
|
IRF822 |
Fairchild Semiconductor |
|
|
N-channel power mosfets, 3.0 A, 450 V/500 V |
|
FSYC160D1 |
Intersil Corporation |
|
|
radiation hardened, segr resistant, N-channel power mosfets |
|
FSYC160D3 |
Intersil Corporation |
|
|
radiation hardened, segr resistant, N-channel power mosfets |
|
FSYC160D |
Intersil Corporation |
|
|
radiation hardened, segr resistant, N-channel power mosfets |
|
FSYC160R4 |
Intersil Corporation |
|
|
radiation hardened, segr resistant, N-channel power mosfets |
|
FSYC160R |
Intersil Corporation |
|
|
radiation hardened, segr resistant, N-channel power mosfets |
|
FSYC160R1 |
Intersil Corporation |
|
|
radiation hardened, segr resistant, N-channel power mosfets |
|
FSYC163D |
Intersil Corporation |
|
|
radiation hardened, segr resistant N-channel power mosfets |
|
FSYC163D3 |
Intersil Corporation |
|
|
radiation hardened, segr resistant N-channel power mosfets |
|
FSYC163D1 |
Intersil Corporation |
|
|
radiation hardened, segr resistant N-channel power mosfets |
|
FSYC160R3 |
Intersil Corporation |
|
|
radiation hardened, segr resistant, N-channel power mosfets |
|
FSYC163R3 |
Intersil Corporation |
|
|
radiation hardened, segr resistant N-channel power mosfets |
|
FSYC163R1 |
Intersil Corporation |
|
|
radiation hardened, segr resistant N-channel power mosfets |
|
FSYC163R |
Intersil Corporation |
|
|
radiation hardened, segr resistant N-channel power mosfets |
|
FSYC163R4 |
Intersil Corporation |
|
|
radiation hardened, segr resistant N-channel power mosfets |
|
IRF9243 |
Samsung semiconductor |
|
|
P-channel power mosfets |
|
IRF9142 |
Samsung semiconductor |
|
|
P-channel power mosfets |
|
IRF9640 |
Samsung semiconductor |
|
|
P-channel power mosfets |
|
IRF822 |
Samsung semiconductor |
|
|
N-channel power mosfets |