|
IRF9143 |
Samsung semiconductor |
|
|
P-channel power mosfets |
|
IRF9230 |
Samsung semiconductor |
|
|
P-channel power mosfets |
|
IRF9230 |
Intersil Corporation |
|
|
-5.5A and -6.5A, -150v and -200v, 0.8 and 1.2 ohm, P-channel power mosfets |
|
IRF9232 |
Samsung semiconductor |
|
|
P-channel power mosfets |
|
IRF9231 |
Samsung semiconductor |
|
|
P-channel power mosfets |
|
IRF9231 |
Intersil Corporation |
|
|
-5.5A and -6.5A, -150v and -200v, 0.8 and 1.2 ohm, P-channel power mosfets |
|
IRF9233 |
Samsung semiconductor |
|
|
P-channel power mosfets |
|
IRF9232 |
Intersil Corporation |
|
|
-5.5A and -6.5A, -150v and -200v, 0.8 and 1.2 ohm, P-channel power mosfets |
|
IRF9233 |
Intersil Corporation |
|
|
-5.5A and -6.5A, -150v and -200v, 0.8 and 1.2 ohm, P-channel power mosfets |
|
IRF9240 |
Samsung semiconductor |
|
|
P-channel power mosfets |
|
IRF9241 |
Samsung semiconductor |
|
|
P-channel power mosfets |
|
IRF623 |
Fairchild Semiconductor |
|
|
N-channel power mosfets, 7A, 150-200v |
|
IRF630 |
Intersil Corporation |
|
|
9A, 200v, 0.400 ohm, N-channel power mosfets |
|
IRF630 |
Fairchild Semiconductor |
|
半导体
|
N-channel power mosfets, 12a, 150-200 V |
|
ZXMN15A27K |
Diodes Incorporated |
|
半导体
|
mosfets optimised for voice over internet protocol (voip) |
|
IRF9Z30 |
International Rectifier |
|
|
P-channel 50 volt power mosfets |
|
IRF9Z32 |
International Rectifier |
|
|
P-channel 50 volt power mosfets |
|
IRF842 |
Fairchild Semiconductor |
|
|
N-channel power mosfets, 8A, 450 V/500v |
|
ZXMN20B28K |
Diodes Incorporated |
|
半导体
|
mosfets optimised for voice over internet protocol (voip) |
|
IRF9242 |
Samsung semiconductor |
|
|
P-channel power mosfets |