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IRF252 |
Samsung semiconductor |
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N-channel power mosfets |
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IRF253 |
Samsung semiconductor |
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N-channel power mosfets |
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2N7002DWT/R13 |
Pan Jit International Inc. |
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dual N-channel enhancement mode mosfets |
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2N7002DW_05 |
Pan Jit International Inc. |
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dual N-channel enhancement mode mosfets |
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2N7002DWT/R7 |
Pan Jit International Inc. |
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dual N-channel enhancement mode mosfets |
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IRFR320 |
Intersil Corporation |
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3.1A, 400v, 1.800 ohm, N-channel power mosfets |
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APT5028SVR |
Advanced Power Technology |
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power mos V is a new generation of high voltage N-channel enhancement mode power mosFETs. |
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IRFR214 |
Intersil Corporation |
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2.2A, 250v, 2.000 ohm, N-channel power mosfets |
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IRFR110 |
Intersil Corporation |
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4.7A, 100v, 0.540 ohm, N-channel power mosfets |
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IRFR120 |
Intersil Corporation |
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8.4A, 100v, 0.270 ohm, N-channel power mosfets |
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IRF220 |
Samsung semiconductor |
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N-channel power mosfets |
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IRF220 |
Fairchild Semiconductor |
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N-channel power mosfets, 7A, 150-200v |
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IRF220 |
Intersil Corporation |
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4.0A and 5.0A, 150v and 200v, 0.8 and 1.2 ohm, N-channel power mosfets |
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IRF220-223 |
Fairchild Semiconductor |
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N-channel power mosfets, 7A, 150-200v |
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IRF221 |
Samsung semiconductor |
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N-channel power mosfets |
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IRF221 |
Fairchild Semiconductor |
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N-channel power mosfets, 7A, 150-200v |
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IRF221 |
Intersil Corporation |
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4.0A and 5.0A, 150v and 200v, 0.8 and 1.2 ohm, N-channel power mosfets |
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IRF222 |
Samsung semiconductor |
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N-channel power mosfets |
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IRF222 |
Fairchild Semiconductor |
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N-channel power mosfets, 7A, 150-200v |
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IRF222 |
Intersil Corporation |
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4.0A and 5.0A, 150v and 200v, 0.8 and 1.2 ohm, N-channel power mosfets |